Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (1 1 1) micro-seeds

T. Sakane; K. Toko; T. Tanaka; Taizoh Sadoh; M. Miyao

doi:10.1016/j.sse.2011.01.037

Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (1 1 1) micro-seeds

T. Sakane, K. Toko, T. Tanaka, Taizoh Sadoh, M. Miyao

Electronic Devices

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

Liquid-phase epitaxial growth of Ge islands on insulator (GOI) using Ni-imprint-induced Si (1 1 1) micro-crystal seeds (∼1 μmφ) is proposed. As a result, single-crystalline GOI (1 1 1) structures with large area (∼10 μmφ) are realized. The transmission electron microscopy observations reveal no dislocation or stacking fault in the laterally grown regions. Moreover, the Raman measurements show that the tensile strain (∼0.2%) which enhances the carrier mobility is induced in the growth regions. This new method can be employed to realize the multi-functional SiGe large scale integrated circuits.

Original language	English
Pages (from-to)	22-25
Number of pages	4
Journal	Solid-State Electronics
Volume	60
Issue number	1
DOIs	https://doi.org/10.1016/j.sse.2011.01.037
Publication status	Published - Jun 1 2011

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All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Materials Chemistry

Cite this

Sakane, T., Toko, K., Tanaka, T., Sadoh, T., & Miyao, M. (2011). Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (1 1 1) micro-seeds. Solid-State Electronics, 60(1), 22-25. https://doi.org/10.1016/j.sse.2011.01.037

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10.1016/j.sse.2011.01.037