Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (1 1 1) micro-seeds

T. Sakane; K. Toko; T. Tanaka; T. Sadoh; M. Miyao

doi:10.1016/j.sse.2011.01.037

Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (1 1 1) micro-seeds

T. Sakane, K. Toko, T. Tanaka, T. Sadoh, M. Miyao

Electronic Devices

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Liquid-phase epitaxial growth of Ge islands on insulator (GOI) using Ni-imprint-induced Si (1 1 1) micro-crystal seeds (∼1 μmφ) is proposed. As a result, single-crystalline GOI (1 1 1) structures with large area (∼10 μmφ) are realized. The transmission electron microscopy observations reveal no dislocation or stacking fault in the laterally grown regions. Moreover, the Raman measurements show that the tensile strain (∼0.2%) which enhances the carrier mobility is induced in the growth regions. This new method can be employed to realize the multi-functional SiGe large scale integrated circuits.

Original language	English
Pages (from-to)	22-25
Number of pages	4
Journal	Solid-State Electronics
Volume	60
Issue number	1
DOIs	https://doi.org/10.1016/j.sse.2011.01.037
Publication status	Published - Jun 2011

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2011.01.037

Cite this

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title = "Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (1 1 1) micro-seeds",

abstract = "Liquid-phase epitaxial growth of Ge islands on insulator (GOI) using Ni-imprint-induced Si (1 1 1) micro-crystal seeds (∼1 μmφ) is proposed. As a result, single-crystalline GOI (1 1 1) structures with large area (∼10 μmφ) are realized. The transmission electron microscopy observations reveal no dislocation or stacking fault in the laterally grown regions. Moreover, the Raman measurements show that the tensile strain (∼0.2%) which enhances the carrier mobility is induced in the growth regions. This new method can be employed to realize the multi-functional SiGe large scale integrated circuits.",

author = "T. Sakane and K. Toko and T. Tanaka and T. Sadoh and M. Miyao",

note = "Funding Information: The authors wish to thank to Prof. T. Asano and Dr. N. Watanabe of Kyushu University for providing the tip-array substrates and their helpful discussions. A part of this work was supported by Semiconductor Technology Academic Research Center and a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, and Technology in Japan.",

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doi = "10.1016/j.sse.2011.01.037",

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AU - Sakane, T.

AU - Toko, K.

AU - Tanaka, T.

AU - Sadoh, T.

AU - Miyao, M.

N1 - Funding Information: The authors wish to thank to Prof. T. Asano and Dr. N. Watanabe of Kyushu University for providing the tip-array substrates and their helpful discussions. A part of this work was supported by Semiconductor Technology Academic Research Center and a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, and Technology in Japan.

PY - 2011/6

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N2 - Liquid-phase epitaxial growth of Ge islands on insulator (GOI) using Ni-imprint-induced Si (1 1 1) micro-crystal seeds (∼1 μmφ) is proposed. As a result, single-crystalline GOI (1 1 1) structures with large area (∼10 μmφ) are realized. The transmission electron microscopy observations reveal no dislocation or stacking fault in the laterally grown regions. Moreover, the Raman measurements show that the tensile strain (∼0.2%) which enhances the carrier mobility is induced in the growth regions. This new method can be employed to realize the multi-functional SiGe large scale integrated circuits.

AB - Liquid-phase epitaxial growth of Ge islands on insulator (GOI) using Ni-imprint-induced Si (1 1 1) micro-crystal seeds (∼1 μmφ) is proposed. As a result, single-crystalline GOI (1 1 1) structures with large area (∼10 μmφ) are realized. The transmission electron microscopy observations reveal no dislocation or stacking fault in the laterally grown regions. Moreover, the Raman measurements show that the tensile strain (∼0.2%) which enhances the carrier mobility is induced in the growth regions. This new method can be employed to realize the multi-functional SiGe large scale integrated circuits.

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Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (1 1 1) micro-seeds

Abstract

All Science Journal Classification (ASJC) codes

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