Abstract
Liquid-phase epitaxial growth of Ge islands on insulator (GOI) using Ni-imprint-induced Si (1 1 1) micro-crystal seeds (∼1 μmφ) is proposed. As a result, single-crystalline GOI (1 1 1) structures with large area (∼10 μmφ) are realized. The transmission electron microscopy observations reveal no dislocation or stacking fault in the laterally grown regions. Moreover, the Raman measurements show that the tensile strain (∼0.2%) which enhances the carrier mobility is induced in the growth regions. This new method can be employed to realize the multi-functional SiGe large scale integrated circuits.
Original language | English |
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Pages (from-to) | 22-25 |
Number of pages | 4 |
Journal | Solid-State Electronics |
Volume | 60 |
Issue number | 1 |
DOIs | |
Publication status | Published - Jun 2011 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry