Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (1 1 1) micro-seeds

T. Sakane, K. Toko, T. Tanaka, Taizoh Sadoh, M. Miyao

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2 Citations (Scopus)

Abstract

Liquid-phase epitaxial growth of Ge islands on insulator (GOI) using Ni-imprint-induced Si (1 1 1) micro-crystal seeds (∼1 μmφ) is proposed. As a result, single-crystalline GOI (1 1 1) structures with large area (∼10 μmφ) are realized. The transmission electron microscopy observations reveal no dislocation or stacking fault in the laterally grown regions. Moreover, the Raman measurements show that the tensile strain (∼0.2%) which enhances the carrier mobility is induced in the growth regions. This new method can be employed to realize the multi-functional SiGe large scale integrated circuits.

Original languageEnglish
Pages (from-to)22-25
Number of pages4
JournalSolid-State Electronics
Volume60
Issue number1
DOIs
Publication statusPublished - Jun 1 2011

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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