Strength reliability of micro polycrystalline silicon structure

Shigeru Hamada, Kenji Hashizume

Research output: Contribution to journalArticle

Abstract

In order to evaluate strength reliability of micron size polycrystalline silicon (poly-Si) structure, bending tests of cantilever beam and Weibull analysis are performed. Recently, the importance of microelectromechanical systems (MEMS) in society is increasing, and the number of production is also increasing. The MEMS devices, which contain mechanical movement, have to maintain their reliability in face of external shock, thermal stress and residual stress from manufacturing processes. In greeting the mass production era of the MEMS, in case the material strength design of MEMS is performed, required strength data is not average value but the variation, especially minimum value of the material. Micron size poly-Si structure is widely employed in the MEMS such as microsensor, switching device and so on. Then, in order to evaluate strength reliability of micron size poly-Si structure, tests and analysis are performed. The specimen is made by chemical vapor deposition (CVD) process and thickness is 3.5, 6.4 and 8.3 micrometer and the specimen has notch. The test specimen used for the test changed characteristics of (1) film thickness (2) stress concentration, and investigation about the influence each effects of the variation in a bending strength are discussed.

Original languageEnglish
Pages (from-to)777-780
Number of pages4
JournalKey Engineering Materials
Volume345-346 I
Publication statusPublished - May 22 2007

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Polysilicon
MEMS
Microsensors
Bending tests
Cantilever beams
Thermal stress
Bending strength
Film thickness
Stress concentration
Chemical vapor deposition
Residual stresses

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Strength reliability of micro polycrystalline silicon structure. / Hamada, Shigeru; Hashizume, Kenji.

In: Key Engineering Materials, Vol. 345-346 I, 22.05.2007, p. 777-780.

Research output: Contribution to journalArticle

@article{1dc0c2eab5604a3f9fbe70dcdab4bf06,
title = "Strength reliability of micro polycrystalline silicon structure",
abstract = "In order to evaluate strength reliability of micron size polycrystalline silicon (poly-Si) structure, bending tests of cantilever beam and Weibull analysis are performed. Recently, the importance of microelectromechanical systems (MEMS) in society is increasing, and the number of production is also increasing. The MEMS devices, which contain mechanical movement, have to maintain their reliability in face of external shock, thermal stress and residual stress from manufacturing processes. In greeting the mass production era of the MEMS, in case the material strength design of MEMS is performed, required strength data is not average value but the variation, especially minimum value of the material. Micron size poly-Si structure is widely employed in the MEMS such as microsensor, switching device and so on. Then, in order to evaluate strength reliability of micron size poly-Si structure, tests and analysis are performed. The specimen is made by chemical vapor deposition (CVD) process and thickness is 3.5, 6.4 and 8.3 micrometer and the specimen has notch. The test specimen used for the test changed characteristics of (1) film thickness (2) stress concentration, and investigation about the influence each effects of the variation in a bending strength are discussed.",
author = "Shigeru Hamada and Kenji Hashizume",
year = "2007",
month = "5",
day = "22",
language = "English",
volume = "345-346 I",
pages = "777--780",
journal = "Key Engineering Materials",
issn = "1013-9826",
publisher = "Trans Tech Publications",

}

TY - JOUR

T1 - Strength reliability of micro polycrystalline silicon structure

AU - Hamada, Shigeru

AU - Hashizume, Kenji

PY - 2007/5/22

Y1 - 2007/5/22

N2 - In order to evaluate strength reliability of micron size polycrystalline silicon (poly-Si) structure, bending tests of cantilever beam and Weibull analysis are performed. Recently, the importance of microelectromechanical systems (MEMS) in society is increasing, and the number of production is also increasing. The MEMS devices, which contain mechanical movement, have to maintain their reliability in face of external shock, thermal stress and residual stress from manufacturing processes. In greeting the mass production era of the MEMS, in case the material strength design of MEMS is performed, required strength data is not average value but the variation, especially minimum value of the material. Micron size poly-Si structure is widely employed in the MEMS such as microsensor, switching device and so on. Then, in order to evaluate strength reliability of micron size poly-Si structure, tests and analysis are performed. The specimen is made by chemical vapor deposition (CVD) process and thickness is 3.5, 6.4 and 8.3 micrometer and the specimen has notch. The test specimen used for the test changed characteristics of (1) film thickness (2) stress concentration, and investigation about the influence each effects of the variation in a bending strength are discussed.

AB - In order to evaluate strength reliability of micron size polycrystalline silicon (poly-Si) structure, bending tests of cantilever beam and Weibull analysis are performed. Recently, the importance of microelectromechanical systems (MEMS) in society is increasing, and the number of production is also increasing. The MEMS devices, which contain mechanical movement, have to maintain their reliability in face of external shock, thermal stress and residual stress from manufacturing processes. In greeting the mass production era of the MEMS, in case the material strength design of MEMS is performed, required strength data is not average value but the variation, especially minimum value of the material. Micron size poly-Si structure is widely employed in the MEMS such as microsensor, switching device and so on. Then, in order to evaluate strength reliability of micron size poly-Si structure, tests and analysis are performed. The specimen is made by chemical vapor deposition (CVD) process and thickness is 3.5, 6.4 and 8.3 micrometer and the specimen has notch. The test specimen used for the test changed characteristics of (1) film thickness (2) stress concentration, and investigation about the influence each effects of the variation in a bending strength are discussed.

UR - http://www.scopus.com/inward/record.url?scp=34248569735&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34248569735&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:34248569735

VL - 345-346 I

SP - 777

EP - 780

JO - Key Engineering Materials

JF - Key Engineering Materials

SN - 1013-9826

ER -