Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method

Shinichi Nishizawa, Yumi Michikawa, Tomohisa Kato, Fusao Hirose, Naoki Oyanagi, Kazuo Arai

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

In order to grow a high quality SiC bulk single crystal, it is important to moderate the residual stress in the grown crystal. The residual stress is affected by not only the temperature distribution, but also by the boundary conditions. In this study, firstly, the effect of the polycrystal and of the crucible walls on the stress distribution was numerically analyzed. The effect of the grown crystal shape on the residual stress was also analyzed and compared to the growth experiment. It is pointed out that in order to moderate the residual stress, it is necessary to take care not only of the temperature distribution but also of the boundary conditions.

Original languageEnglish
Pages (from-to)13-16
Number of pages4
JournalMaterials Science Forum
Volume433-436
Publication statusPublished - Nov 24 2003
Externally publishedYes
EventProceedings of the 4th European Conference on Silicon Carbide and Related Materials - Linkoping, Sweden
Duration: Sep 2 2002Sep 5 2002

Fingerprint

stress analysis
Sublimation
Crystallization
Stress analysis
sublimation
Crystal growth
residual stress
crystal growth
Residual stresses
Single crystals
single crystals
Temperature distribution
temperature distribution
Boundary conditions
boundary conditions
Crystals
Crucibles
Polycrystals
crucibles
polycrystals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Nishizawa, S., Michikawa, Y., Kato, T., Hirose, F., Oyanagi, N., & Arai, K. (2003). Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method. Materials Science Forum, 433-436, 13-16.

Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method. / Nishizawa, Shinichi; Michikawa, Yumi; Kato, Tomohisa; Hirose, Fusao; Oyanagi, Naoki; Arai, Kazuo.

In: Materials Science Forum, Vol. 433-436, 24.11.2003, p. 13-16.

Research output: Contribution to journalConference article

Nishizawa, S, Michikawa, Y, Kato, T, Hirose, F, Oyanagi, N & Arai, K 2003, 'Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method', Materials Science Forum, vol. 433-436, pp. 13-16.
Nishizawa S, Michikawa Y, Kato T, Hirose F, Oyanagi N, Arai K. Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method. Materials Science Forum. 2003 Nov 24;433-436:13-16.
Nishizawa, Shinichi ; Michikawa, Yumi ; Kato, Tomohisa ; Hirose, Fusao ; Oyanagi, Naoki ; Arai, Kazuo. / Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method. In: Materials Science Forum. 2003 ; Vol. 433-436. pp. 13-16.
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