Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method

Shin Ichi Nishizawa, Yumi Michikawa, Tomohisa Kato, Fusao Hirose, Naoki Oyanagi, Kazuo Arai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

In order to grow a high quality SiC bulk single crystal, it is important to moderate the residual stress in the grown crystal. The residual stress is affected by not only the temperature distribution, but also by the boundary conditions. In this study, firstly, the effect of the polycrystal and of the crucible walls on the stress distribution was numerically analyzed. The effect of the grown crystal shape on the residual stress was also analyzed and compared to the growth experiment. It is pointed out that in order to moderate the residual stress, it is necessary to take care not only of the temperature distribution but also of the boundary conditions.

Original languageEnglish
Title of host publicationMaterials Science Forum
EditorsPeder Bergman, Erik Janzén
PublisherTrans Tech Publications Ltd
Pages13-16
Number of pages4
ISBN (Print)9780878499205
DOIs
Publication statusPublished - Jan 1 2003
Externally publishedYes
EventProceedings of the 4th European Conference on Silicon Carbide and Related Materials - Linkoping, Sweden
Duration: Sep 2 2002Sep 5 2002

Publication series

NameMaterials Science Forum
Volume433-436
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

OtherProceedings of the 4th European Conference on Silicon Carbide and Related Materials
CountrySweden
CityLinkoping
Period9/2/029/5/02

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Nishizawa, S. I., Michikawa, Y., Kato, T., Hirose, F., Oyanagi, N., & Arai, K. (2003). Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method. In P. Bergman, & E. Janzén (Eds.), Materials Science Forum (pp. 13-16). (Materials Science Forum; Vol. 433-436). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/msf.433-436.13