Stress-enhancement in free-standing Si pillars through nonequilibrium dehydrogenation in SiN:H stress-liners by ultraviolet light irradiation

Takanori Tanaka, Taizoh Sadoh, Masashi Kurosawa, Masanori Tanaka, Masanori Yamaguchi, Shinji Suzuki, Tokuhide Kitamura, Masanobu Miyao

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Abstract

Tensile-strained Si pillars are desired to achieve three-dimensional (3D) transistors with high speed. Effects of ultraviolet (UV) light irradiation on tensile strains in Si pillars covered with SiN:H stress-liners are investigated as a function of the wavelength (172-436 nm). Tensile-stress enhancement is found at specific wavelengths (200-330 nm) under low-temperature heating (400 °C), where dehydrogenation in SiN:H is clearly detected by infrared absorption measurements. On the other hand, equilibrium dehydrogenation by high-temperature heating (>700 °C) without UV-irradiation does not cause tensile-stress enhancement. This nonequilibrium dehydrogenation at low temperatures opens up possibility of 3D transistors with high carrier mobility.

Original languageEnglish
Article number262103
JournalApplied Physics Letters
Volume95
Issue number26
DOIs
Publication statusPublished - Dec 1 2009

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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