Stress-enhancement in free-standing Si pillars through nonequilibrium dehydrogenation in SiN:H stress-liners by ultraviolet light irradiation

Takanori Tanaka; Taizoh Sadoh; Masashi Kurosawa; Masanori Tanaka; Masanori Yamaguchi; Shinji Suzuki; Tokuhide Kitamura; Masanobu Miyao

doi:10.1063/1.3278596

Stress-enhancement in free-standing Si pillars through nonequilibrium dehydrogenation in SiN:H stress-liners by ultraviolet light irradiation

Takanori Tanaka, Taizoh Sadoh, Masashi Kurosawa, Masanori Tanaka, Masanori Yamaguchi, Shinji Suzuki, Tokuhide Kitamura, Masanobu Miyao

Electronic Devices

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Tensile-strained Si pillars are desired to achieve three-dimensional (3D) transistors with high speed. Effects of ultraviolet (UV) light irradiation on tensile strains in Si pillars covered with SiN:H stress-liners are investigated as a function of the wavelength (172-436 nm). Tensile-stress enhancement is found at specific wavelengths (200-330 nm) under low-temperature heating (400 °C), where dehydrogenation in SiN:H is clearly detected by infrared absorption measurements. On the other hand, equilibrium dehydrogenation by high-temperature heating (>700 °C) without UV-irradiation does not cause tensile-stress enhancement. This nonequilibrium dehydrogenation at low temperatures opens up possibility of 3D transistors with high carrier mobility.

Original language	English
Article number	262103
Journal	Applied Physics Letters
Volume	95
Issue number	26
DOIs	https://doi.org/10.1063/1.3278596
Publication status	Published - Dec 1 2009

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3278596

Fingerprint Dive into the research topics of 'Stress-enhancement in free-standing Si pillars through nonequilibrium dehydrogenation in SiN:H stress-liners by ultraviolet light irradiation'. Together they form a unique fingerprint.

Cite this

Stress-enhancement in free-standing Si pillars through nonequilibrium dehydrogenation in SiN:H stress-liners by ultraviolet light irradiation. / Tanaka, Takanori; Sadoh, Taizoh; Kurosawa, Masashi; Tanaka, Masanori; Yamaguchi, Masanori; Suzuki, Shinji; Kitamura, Tokuhide; Miyao, Masanobu.

In: Applied Physics Letters, Vol. 95, No. 26, 262103, 01.12.2009.

Research output: Contribution to journal › Article › peer-review

@article{6b7ea34e84f04c5da1409f3f362113e8,

title = "Stress-enhancement in free-standing Si pillars through nonequilibrium dehydrogenation in SiN:H stress-liners by ultraviolet light irradiation",

abstract = "Tensile-strained Si pillars are desired to achieve three-dimensional (3D) transistors with high speed. Effects of ultraviolet (UV) light irradiation on tensile strains in Si pillars covered with SiN:H stress-liners are investigated as a function of the wavelength (172-436 nm). Tensile-stress enhancement is found at specific wavelengths (200-330 nm) under low-temperature heating (400 °C), where dehydrogenation in SiN:H is clearly detected by infrared absorption measurements. On the other hand, equilibrium dehydrogenation by high-temperature heating (>700 °C) without UV-irradiation does not cause tensile-stress enhancement. This nonequilibrium dehydrogenation at low temperatures opens up possibility of 3D transistors with high carrier mobility.",

author = "Takanori Tanaka and Taizoh Sadoh and Masashi Kurosawa and Masanori Tanaka and Masanori Yamaguchi and Shinji Suzuki and Tokuhide Kitamura and Masanobu Miyao",

year = "2009",

month = dec,

day = "1",

doi = "10.1063/1.3278596",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "26",

}

TY - JOUR

T1 - Stress-enhancement in free-standing Si pillars through nonequilibrium dehydrogenation in SiN:H stress-liners by ultraviolet light irradiation

AU - Tanaka, Takanori

AU - Sadoh, Taizoh

AU - Kurosawa, Masashi

AU - Tanaka, Masanori

AU - Yamaguchi, Masanori

AU - Suzuki, Shinji

AU - Kitamura, Tokuhide

AU - Miyao, Masanobu

PY - 2009/12/1

Y1 - 2009/12/1

N2 - Tensile-strained Si pillars are desired to achieve three-dimensional (3D) transistors with high speed. Effects of ultraviolet (UV) light irradiation on tensile strains in Si pillars covered with SiN:H stress-liners are investigated as a function of the wavelength (172-436 nm). Tensile-stress enhancement is found at specific wavelengths (200-330 nm) under low-temperature heating (400 °C), where dehydrogenation in SiN:H is clearly detected by infrared absorption measurements. On the other hand, equilibrium dehydrogenation by high-temperature heating (>700 °C) without UV-irradiation does not cause tensile-stress enhancement. This nonequilibrium dehydrogenation at low temperatures opens up possibility of 3D transistors with high carrier mobility.

AB - Tensile-strained Si pillars are desired to achieve three-dimensional (3D) transistors with high speed. Effects of ultraviolet (UV) light irradiation on tensile strains in Si pillars covered with SiN:H stress-liners are investigated as a function of the wavelength (172-436 nm). Tensile-stress enhancement is found at specific wavelengths (200-330 nm) under low-temperature heating (400 °C), where dehydrogenation in SiN:H is clearly detected by infrared absorption measurements. On the other hand, equilibrium dehydrogenation by high-temperature heating (>700 °C) without UV-irradiation does not cause tensile-stress enhancement. This nonequilibrium dehydrogenation at low temperatures opens up possibility of 3D transistors with high carrier mobility.

UR - http://www.scopus.com/inward/record.url?scp=73649108279&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=73649108279&partnerID=8YFLogxK

U2 - 10.1063/1.3278596

DO - 10.1063/1.3278596

M3 - Article

AN - SCOPUS:73649108279

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 26

M1 - 262103

ER -