Abstract
Tensile-strained Si pillars are desired to achieve three-dimensional (3D) transistors with high speed. Effects of ultraviolet (UV) light irradiation on tensile strains in Si pillars covered with SiN:H stress-liners are investigated as a function of the wavelength (172-436 nm). Tensile-stress enhancement is found at specific wavelengths (200-330 nm) under low-temperature heating (400 °C), where dehydrogenation in SiN:H is clearly detected by infrared absorption measurements. On the other hand, equilibrium dehydrogenation by high-temperature heating (>700 °C) without UV-irradiation does not cause tensile-stress enhancement. This nonequilibrium dehydrogenation at low temperatures opens up possibility of 3D transistors with high carrier mobility.
Original language | English |
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Article number | 262103 |
Journal | Applied Physics Letters |
Volume | 95 |
Issue number | 26 |
DOIs | |
Publication status | Published - Dec 1 2009 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)