Abstract
A stress relaxation effect on the transport properties of strained vanadium dioxide epitaxial thin films grown on Ti O2 (001) single crystal was investigated. When varying the film thickness ranging from 10 to 30 nm, there were no significant changes on the crystal structures identified by x-ray diffraction, i.e., no observable stress relaxation effects. On the other hand, increasing the film thickness resulted in the drastic changes on the transport properties including emerging the multisteps of the metal-insulator transition and also increasing the resistivity. The discrepancy between the observed crystal structure and the transport properties was related to the presence of the nanoscale line cracks due to thermal stress. Thus controlling thermal stress relaxation rather than the stress due to the lattice mismatch is critical to investigate the intrinsic nature on the transport properties of strained vanadium dioxide epitaxial thin films.
| Original language | English |
|---|---|
| Article number | 172106 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 74 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - Nov 24 2006 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
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Stress relaxation effect on transport properties of strained vanadium dioxide epitaxial thin films. / Nagashima, Kazuki; Yanagida, Takeshi; Tanaka, Hidekazu; Kawai, Tomoji.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 74, No. 17, 172106, 24.11.2006.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Stress relaxation effect on transport properties of strained vanadium dioxide epitaxial thin films
AU - Nagashima, Kazuki
AU - Yanagida, Takeshi
AU - Tanaka, Hidekazu
AU - Kawai, Tomoji
PY - 2006/11/24
Y1 - 2006/11/24
N2 - A stress relaxation effect on the transport properties of strained vanadium dioxide epitaxial thin films grown on Ti O2 (001) single crystal was investigated. When varying the film thickness ranging from 10 to 30 nm, there were no significant changes on the crystal structures identified by x-ray diffraction, i.e., no observable stress relaxation effects. On the other hand, increasing the film thickness resulted in the drastic changes on the transport properties including emerging the multisteps of the metal-insulator transition and also increasing the resistivity. The discrepancy between the observed crystal structure and the transport properties was related to the presence of the nanoscale line cracks due to thermal stress. Thus controlling thermal stress relaxation rather than the stress due to the lattice mismatch is critical to investigate the intrinsic nature on the transport properties of strained vanadium dioxide epitaxial thin films.
AB - A stress relaxation effect on the transport properties of strained vanadium dioxide epitaxial thin films grown on Ti O2 (001) single crystal was investigated. When varying the film thickness ranging from 10 to 30 nm, there were no significant changes on the crystal structures identified by x-ray diffraction, i.e., no observable stress relaxation effects. On the other hand, increasing the film thickness resulted in the drastic changes on the transport properties including emerging the multisteps of the metal-insulator transition and also increasing the resistivity. The discrepancy between the observed crystal structure and the transport properties was related to the presence of the nanoscale line cracks due to thermal stress. Thus controlling thermal stress relaxation rather than the stress due to the lattice mismatch is critical to investigate the intrinsic nature on the transport properties of strained vanadium dioxide epitaxial thin films.
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U2 - 10.1103/PhysRevB.74.172106
DO - 10.1103/PhysRevB.74.172106
M3 - Article
VL - 74
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 1098-0121
IS - 17
M1 - 172106
ER -