Abstract
The mechanism for the stress-relaxation in the Ge condensation induced by H+ irradiation-assisted oxidation method was investigated. Relaxation ratio of Si0.7Ge0.3 (thickness: 28 nm) formed by medium dose H+ irradiation (5 × 1015 cm- 2) and oxidation at 1100 °C was limited to 35%. Post-annealing (1200 °C) improved this value significantly (70%), though defect density was found to be kept at low density (< 106 cm- 2). However, the height of cross hatches was increased (from 0.6 nm to 4.1 nm) after post-annealing. Based on these results, local-area slipping model was proposed, where slipping at SiGe/SiO2 interface of local areas surrounded by cross hatches enhanced stress-relaxation. This model could quantitatively explain the stress-relaxation enhanced by combination of H+ irradiation, oxidation-induced Ge condensation, and post-annealing.
| Original language | English |
|---|---|
| Pages (from-to) | 248-250 |
| Number of pages | 3 |
| Journal | Thin Solid Films |
| Volume | 517 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Nov 3 2008 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
Stress-relaxation mechanism in ultra-thin SiGe on insulator formed by H+ irradiation-assisted Ge condensation method. / Tanaka, Masanori; Kenjo, Atsushi; Sadoh, Taizoh; Miyao, Masanobu.
In: Thin Solid Films, Vol. 517, No. 1, 03.11.2008, p. 248-250.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Stress-relaxation mechanism in ultra-thin SiGe on insulator formed by H+ irradiation-assisted Ge condensation method
AU - Tanaka, Masanori
AU - Kenjo, Atsushi
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
PY - 2008/11/3
Y1 - 2008/11/3
N2 - The mechanism for the stress-relaxation in the Ge condensation induced by H+ irradiation-assisted oxidation method was investigated. Relaxation ratio of Si0.7Ge0.3 (thickness: 28 nm) formed by medium dose H+ irradiation (5 × 1015 cm- 2) and oxidation at 1100 °C was limited to 35%. Post-annealing (1200 °C) improved this value significantly (70%), though defect density was found to be kept at low density (< 106 cm- 2). However, the height of cross hatches was increased (from 0.6 nm to 4.1 nm) after post-annealing. Based on these results, local-area slipping model was proposed, where slipping at SiGe/SiO2 interface of local areas surrounded by cross hatches enhanced stress-relaxation. This model could quantitatively explain the stress-relaxation enhanced by combination of H+ irradiation, oxidation-induced Ge condensation, and post-annealing.
AB - The mechanism for the stress-relaxation in the Ge condensation induced by H+ irradiation-assisted oxidation method was investigated. Relaxation ratio of Si0.7Ge0.3 (thickness: 28 nm) formed by medium dose H+ irradiation (5 × 1015 cm- 2) and oxidation at 1100 °C was limited to 35%. Post-annealing (1200 °C) improved this value significantly (70%), though defect density was found to be kept at low density (< 106 cm- 2). However, the height of cross hatches was increased (from 0.6 nm to 4.1 nm) after post-annealing. Based on these results, local-area slipping model was proposed, where slipping at SiGe/SiO2 interface of local areas surrounded by cross hatches enhanced stress-relaxation. This model could quantitatively explain the stress-relaxation enhanced by combination of H+ irradiation, oxidation-induced Ge condensation, and post-annealing.
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U2 - 10.1016/j.tsf.2008.08.030
DO - 10.1016/j.tsf.2008.08.030
M3 - Article
VL - 517
SP - 248
EP - 250
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1
ER -