Stress-relaxation mechanism in ultra-thin SiGe on insulator formed by H+ irradiation-assisted Ge condensation method

Masanori Tanaka, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The mechanism for the stress-relaxation in the Ge condensation induced by H+ irradiation-assisted oxidation method was investigated. Relaxation ratio of Si0.7Ge0.3 (thickness: 28 nm) formed by medium dose H+ irradiation (5 × 1015 cm- 2) and oxidation at 1100 °C was limited to 35%. Post-annealing (1200 °C) improved this value significantly (70%), though defect density was found to be kept at low density (< 106 cm- 2). However, the height of cross hatches was increased (from 0.6 nm to 4.1 nm) after post-annealing. Based on these results, local-area slipping model was proposed, where slipping at SiGe/SiO2 interface of local areas surrounded by cross hatches enhanced stress-relaxation. This model could quantitatively explain the stress-relaxation enhanced by combination of H+ irradiation, oxidation-induced Ge condensation, and post-annealing.

Original languageEnglish
Pages (from-to)248-250
Number of pages3
JournalThin Solid Films
Volume517
Issue number1
DOIs
Publication statusPublished - Nov 3 2008

Fingerprint

stress relaxation
Stress relaxation
hatches
Hatches
Condensation
condensation
insulators
Irradiation
Annealing
Oxidation
oxidation
irradiation
annealing
Defect density
Dosimetry
dosage
defects

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Stress-relaxation mechanism in ultra-thin SiGe on insulator formed by H+ irradiation-assisted Ge condensation method. / Tanaka, Masanori; Kenjo, Atsushi; Sadoh, Taizoh; Miyao, Masanobu.

In: Thin Solid Films, Vol. 517, No. 1, 03.11.2008, p. 248-250.

Research output: Contribution to journalArticle

Tanaka, Masanori ; Kenjo, Atsushi ; Sadoh, Taizoh ; Miyao, Masanobu. / Stress-relaxation mechanism in ultra-thin SiGe on insulator formed by H+ irradiation-assisted Ge condensation method. In: Thin Solid Films. 2008 ; Vol. 517, No. 1. pp. 248-250.
@article{11a53e4141454d80a305a2fe643d2700,
title = "Stress-relaxation mechanism in ultra-thin SiGe on insulator formed by H+ irradiation-assisted Ge condensation method",
abstract = "The mechanism for the stress-relaxation in the Ge condensation induced by H+ irradiation-assisted oxidation method was investigated. Relaxation ratio of Si0.7Ge0.3 (thickness: 28 nm) formed by medium dose H+ irradiation (5 × 1015 cm- 2) and oxidation at 1100 °C was limited to 35{\%}. Post-annealing (1200 °C) improved this value significantly (70{\%}), though defect density was found to be kept at low density (< 106 cm- 2). However, the height of cross hatches was increased (from 0.6 nm to 4.1 nm) after post-annealing. Based on these results, local-area slipping model was proposed, where slipping at SiGe/SiO2 interface of local areas surrounded by cross hatches enhanced stress-relaxation. This model could quantitatively explain the stress-relaxation enhanced by combination of H+ irradiation, oxidation-induced Ge condensation, and post-annealing.",
author = "Masanori Tanaka and Atsushi Kenjo and Taizoh Sadoh and Masanobu Miyao",
year = "2008",
month = "11",
day = "3",
doi = "10.1016/j.tsf.2008.08.030",
language = "English",
volume = "517",
pages = "248--250",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Stress-relaxation mechanism in ultra-thin SiGe on insulator formed by H+ irradiation-assisted Ge condensation method

AU - Tanaka, Masanori

AU - Kenjo, Atsushi

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2008/11/3

Y1 - 2008/11/3

N2 - The mechanism for the stress-relaxation in the Ge condensation induced by H+ irradiation-assisted oxidation method was investigated. Relaxation ratio of Si0.7Ge0.3 (thickness: 28 nm) formed by medium dose H+ irradiation (5 × 1015 cm- 2) and oxidation at 1100 °C was limited to 35%. Post-annealing (1200 °C) improved this value significantly (70%), though defect density was found to be kept at low density (< 106 cm- 2). However, the height of cross hatches was increased (from 0.6 nm to 4.1 nm) after post-annealing. Based on these results, local-area slipping model was proposed, where slipping at SiGe/SiO2 interface of local areas surrounded by cross hatches enhanced stress-relaxation. This model could quantitatively explain the stress-relaxation enhanced by combination of H+ irradiation, oxidation-induced Ge condensation, and post-annealing.

AB - The mechanism for the stress-relaxation in the Ge condensation induced by H+ irradiation-assisted oxidation method was investigated. Relaxation ratio of Si0.7Ge0.3 (thickness: 28 nm) formed by medium dose H+ irradiation (5 × 1015 cm- 2) and oxidation at 1100 °C was limited to 35%. Post-annealing (1200 °C) improved this value significantly (70%), though defect density was found to be kept at low density (< 106 cm- 2). However, the height of cross hatches was increased (from 0.6 nm to 4.1 nm) after post-annealing. Based on these results, local-area slipping model was proposed, where slipping at SiGe/SiO2 interface of local areas surrounded by cross hatches enhanced stress-relaxation. This model could quantitatively explain the stress-relaxation enhanced by combination of H+ irradiation, oxidation-induced Ge condensation, and post-annealing.

UR - http://www.scopus.com/inward/record.url?scp=54849435429&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=54849435429&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2008.08.030

DO - 10.1016/j.tsf.2008.08.030

M3 - Article

VL - 517

SP - 248

EP - 250

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1

ER -