Stress-relaxation mechanism in ultra-thin SiGe on insulator formed by H+ irradiation-assisted Ge condensation method

Masanori Tanaka, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

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1 Citation (Scopus)


The mechanism for the stress-relaxation in the Ge condensation induced by H+ irradiation-assisted oxidation method was investigated. Relaxation ratio of Si0.7Ge0.3 (thickness: 28 nm) formed by medium dose H+ irradiation (5 × 1015 cm- 2) and oxidation at 1100 °C was limited to 35%. Post-annealing (1200 °C) improved this value significantly (70%), though defect density was found to be kept at low density (< 106 cm- 2). However, the height of cross hatches was increased (from 0.6 nm to 4.1 nm) after post-annealing. Based on these results, local-area slipping model was proposed, where slipping at SiGe/SiO2 interface of local areas surrounded by cross hatches enhanced stress-relaxation. This model could quantitatively explain the stress-relaxation enhanced by combination of H+ irradiation, oxidation-induced Ge condensation, and post-annealing.

Original languageEnglish
Pages (from-to)248-250
Number of pages3
JournalThin Solid Films
Issue number1
Publication statusPublished - Nov 3 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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