TY - JOUR
T1 - Stress-relaxation mechanism in ultra-thin SiGe on insulator formed by H+ irradiation-assisted Ge condensation method
AU - Tanaka, Masanori
AU - Kenjo, Atsushi
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
N1 - Funding Information:
SiGe/SOI wafers were supplied by SUMCO. A part of this work was supported by the Grants-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.
PY - 2008/11/3
Y1 - 2008/11/3
N2 - The mechanism for the stress-relaxation in the Ge condensation induced by H+ irradiation-assisted oxidation method was investigated. Relaxation ratio of Si0.7Ge0.3 (thickness: 28 nm) formed by medium dose H+ irradiation (5 × 1015 cm- 2) and oxidation at 1100 °C was limited to 35%. Post-annealing (1200 °C) improved this value significantly (70%), though defect density was found to be kept at low density (< 106 cm- 2). However, the height of cross hatches was increased (from 0.6 nm to 4.1 nm) after post-annealing. Based on these results, local-area slipping model was proposed, where slipping at SiGe/SiO2 interface of local areas surrounded by cross hatches enhanced stress-relaxation. This model could quantitatively explain the stress-relaxation enhanced by combination of H+ irradiation, oxidation-induced Ge condensation, and post-annealing.
AB - The mechanism for the stress-relaxation in the Ge condensation induced by H+ irradiation-assisted oxidation method was investigated. Relaxation ratio of Si0.7Ge0.3 (thickness: 28 nm) formed by medium dose H+ irradiation (5 × 1015 cm- 2) and oxidation at 1100 °C was limited to 35%. Post-annealing (1200 °C) improved this value significantly (70%), though defect density was found to be kept at low density (< 106 cm- 2). However, the height of cross hatches was increased (from 0.6 nm to 4.1 nm) after post-annealing. Based on these results, local-area slipping model was proposed, where slipping at SiGe/SiO2 interface of local areas surrounded by cross hatches enhanced stress-relaxation. This model could quantitatively explain the stress-relaxation enhanced by combination of H+ irradiation, oxidation-induced Ge condensation, and post-annealing.
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U2 - 10.1016/j.tsf.2008.08.030
DO - 10.1016/j.tsf.2008.08.030
M3 - Article
AN - SCOPUS:54849435429
VL - 517
SP - 248
EP - 250
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1
ER -