Strong interface-induced changes on the numerical calculated Raman scattering in Si/3C-SiC superlattices

E. F. Bezerra, V. N. Freire, A. G. Souza Filho, J. Mendes Filho, V. Lemos, Y. Ikoma, F. Watanabe, T. Motooka

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)

    Abstract

    Raman spectra of (3C-SiC)8-δ/(3C-SiC0.5Si0.5) δ/(Si)8-δ/(3C-SiC0.5Si 0.5)δ superlattices with interfacial transition regions of thickness S varying from one to three monolayers are calculated. It is shown that severe frequency shifts (up to -86cm-1) and the flattening of the folded optical phonons dispersion curves are due to the interfacial regions, strongly affecting the Raman spectrum in consequence. With increasing interface thickness, the Raman peaks are enhanced in the middle frequency range. These effects are mainly attributed to localization of atomic displacements at the Si/3C-SiC or the 3C-SiC/Si interfacial transition regions.

    Original languageEnglish
    Pages (from-to)4316-4318
    Number of pages3
    JournalApplied Physics Letters
    Volume77
    Issue number26
    DOIs
    Publication statusPublished - Dec 25 2000

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy (miscellaneous)

    Fingerprint Dive into the research topics of 'Strong interface-induced changes on the numerical calculated Raman scattering in Si/3C-SiC superlattices'. Together they form a unique fingerprint.

    Cite this