Strong interface-induced changes on the numerical calculated Raman scattering in Si/3C-SiC superlattices

E. F. Bezerra, V. N. Freire, A. G. Souza Filho, J. Mendes Filho, V. Lemos, Yoshifumi Ikoma, F. Watanabe, T. Motooka

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Raman spectra of (3C-SiC)8-δ/(3C-SiC0.5Si0.5) δ/(Si)8-δ/(3C-SiC0.5Si 0.5)δ superlattices with interfacial transition regions of thickness S varying from one to three monolayers are calculated. It is shown that severe frequency shifts (up to -86cm-1) and the flattening of the folded optical phonons dispersion curves are due to the interfacial regions, strongly affecting the Raman spectrum in consequence. With increasing interface thickness, the Raman peaks are enhanced in the middle frequency range. These effects are mainly attributed to localization of atomic displacements at the Si/3C-SiC or the 3C-SiC/Si interfacial transition regions.

Original languageEnglish
Pages (from-to)4316-4318
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number26
DOIs
Publication statusPublished - Dec 25 2000

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Strong interface-induced changes on the numerical calculated Raman scattering in Si/3C-SiC superlattices'. Together they form a unique fingerprint.

  • Cite this

    Bezerra, E. F., Freire, V. N., Souza Filho, A. G., Mendes Filho, J., Lemos, V., Ikoma, Y., Watanabe, F., & Motooka, T. (2000). Strong interface-induced changes on the numerical calculated Raman scattering in Si/3C-SiC superlattices. Applied Physics Letters, 77(26), 4316-4318. https://doi.org/10.1063/1.1328763