Structural analysis on organic thin-film transistor with device simulation

Chang Hoon Shim, Fumito Maruoka, Reiji Hattori

    Research output: Contribution to journalArticlepeer-review

    90 Citations (Scopus)

    Abstract

    A 2-D device simulation for organic thin-film transistors (OTFTs) was carried out to reveal the characteristic difference between staggered and planar structures. Assuming the OTFT with Schottky barrier contact, the staggered-structure TFT has more current flow, bigger field-effect mobility, and lower contact resistance than the planar structure. The simulation results indicate that the source electrode of the staggered structure has better ability to supply the current than that of the planar structure.

    Original languageEnglish
    Article number5339187
    Pages (from-to)195-200
    Number of pages6
    JournalIEEE Transactions on Electron Devices
    Volume57
    Issue number1
    DOIs
    Publication statusPublished - Jan 1 2010

    All Science Journal Classification (ASJC) codes

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

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