Structural analysis on organic thin-film transistor with device simulation

Chang Hoon Shim; Fumito Maruoka; Reiji Hattori

doi:10.1109/TED.2009.2035540

Structural analysis on organic thin-film transistor with device simulation

Chang Hoon Shim, Fumito Maruoka, Reiji Hattori

Research output: Contribution to journal › Article › peer-review

90 Citations (Scopus)

Abstract

A 2-D device simulation for organic thin-film transistors (OTFTs) was carried out to reveal the characteristic difference between staggered and planar structures. Assuming the OTFT with Schottky barrier contact, the staggered-structure TFT has more current flow, bigger field-effect mobility, and lower contact resistance than the planar structure. The simulation results indicate that the source electrode of the staggered structure has better ability to supply the current than that of the planar structure.

Original language	English
Article number	5339187
Pages (from-to)	195-200
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	57
Issue number	1
DOIs	https://doi.org/10.1109/TED.2009.2035540
Publication status	Published - Jan 1 2010

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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abstract = "A 2-D device simulation for organic thin-film transistors (OTFTs) was carried out to reveal the characteristic difference between staggered and planar structures. Assuming the OTFT with Schottky barrier contact, the staggered-structure TFT has more current flow, bigger field-effect mobility, and lower contact resistance than the planar structure. The simulation results indicate that the source electrode of the staggered structure has better ability to supply the current than that of the planar structure.",

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