Structural analysis on organic thin-film transistor with device simulation

Chang Hoon Shim; Fumito Maruoka; Reiji Hattori

doi:10.1109/TED.2009.2035540

Structural analysis on organic thin-film transistor with device simulation

Chang Hoon Shim, Fumito Maruoka, Reiji Hattori

Research output: Contribution to journal › Article › peer-review

104 Citations (Scopus)

Abstract

A 2-D device simulation for organic thin-film transistors (OTFTs) was carried out to reveal the characteristic difference between staggered and planar structures. Assuming the OTFT with Schottky barrier contact, the staggered-structure TFT has more current flow, bigger field-effect mobility, and lower contact resistance than the planar structure. The simulation results indicate that the source electrode of the staggered structure has better ability to supply the current than that of the planar structure.

Original language	English
Article number	5339187
Pages (from-to)	195-200
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	57
Issue number	1
DOIs	https://doi.org/10.1109/TED.2009.2035540
Publication status	Published - Jan 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2009.2035540

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@article{5635ff2f2d574d6f9d9bc247e0ccee50,

title = "Structural analysis on organic thin-film transistor with device simulation",

abstract = "A 2-D device simulation for organic thin-film transistors (OTFTs) was carried out to reveal the characteristic difference between staggered and planar structures. Assuming the OTFT with Schottky barrier contact, the staggered-structure TFT has more current flow, bigger field-effect mobility, and lower contact resistance than the planar structure. The simulation results indicate that the source electrode of the staggered structure has better ability to supply the current than that of the planar structure.",

author = "Shim, {Chang Hoon} and Fumito Maruoka and Reiji Hattori",

year = "2010",

month = jan,

doi = "10.1109/TED.2009.2035540",

language = "English",

volume = "57",

pages = "195--200",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Structural analysis on organic thin-film transistor with device simulation

AU - Shim, Chang Hoon

AU - Maruoka, Fumito

AU - Hattori, Reiji

PY - 2010/1

Y1 - 2010/1

N2 - A 2-D device simulation for organic thin-film transistors (OTFTs) was carried out to reveal the characteristic difference between staggered and planar structures. Assuming the OTFT with Schottky barrier contact, the staggered-structure TFT has more current flow, bigger field-effect mobility, and lower contact resistance than the planar structure. The simulation results indicate that the source electrode of the staggered structure has better ability to supply the current than that of the planar structure.

AB - A 2-D device simulation for organic thin-film transistors (OTFTs) was carried out to reveal the characteristic difference between staggered and planar structures. Assuming the OTFT with Schottky barrier contact, the staggered-structure TFT has more current flow, bigger field-effect mobility, and lower contact resistance than the planar structure. The simulation results indicate that the source electrode of the staggered structure has better ability to supply the current than that of the planar structure.

UR - http://www.scopus.com/inward/record.url?scp=73349086857&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=73349086857&partnerID=8YFLogxK

U2 - 10.1109/TED.2009.2035540

DO - 10.1109/TED.2009.2035540

M3 - Article

AN - SCOPUS:73349086857

VL - 57

SP - 195

EP - 200

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 1

M1 - 5339187

ER -

Structural analysis on organic thin-film transistor with device simulation

Abstract

All Science Journal Classification (ASJC) codes

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