Undoped polycrystalline AgInSe2 crystals were successfully grown at low temperature (650 °C) using a hot-press method. The sizes of the samples were 2 cm in diameter. The largest grain size was approximately 90 nm. The presence of lattice defects such as Ag interstitials might lead to an enhancement in n-type electrical conductivity. The crystals had a resistivity of 2.2 Ω cm, a carrier concentration of 4.2 × 1016 cm 3 and a mobility of 70 cm2V-1s-1 obtained by Hall measurement at RT.
|Journal||Journal of Physics: Conference Series|
|Issue number||PART 4|
|Publication status||Published - Mar 1 2008|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)