Structural and electrical characterization of AgInSe2 crystals grown by hot-press method

Kenji Yoshino; Aya Kinoshita; Yasuhiro Shirahata; Minoru Oshima; Keita Nomoto; Tsuyoshi Yoshitake; Shunji Ozaki; Tetsuo Ikari

doi:10.1088/1742-6596/100/4/042042

Structural and electrical characterization of AgInSe₂ crystals grown by hot-press method

Kenji Yoshino, Aya Kinoshita, Yasuhiro Shirahata, Minoru Oshima, Keita Nomoto, Tsuyoshi Yoshitake, Shunji Ozaki, Tetsuo Ikari

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Undoped polycrystalline AgInSe₂ crystals were successfully grown at low temperature (650 °C) using a hot-press method. The sizes of the samples were 2 cm in diameter. The largest grain size was approximately 90 nm. The presence of lattice defects such as Ag interstitials might lead to an enhancement in n-type electrical conductivity. The crystals had a resistivity of 2.2 Ω cm, a carrier concentration of 4.2 × 10¹⁶ cm ³ and a mobility of 70 cm²V^-1s^-1 obtained by Hall measurement at RT.

Original language	English
Article number	042042
Journal	Journal of Physics: Conference Series
Volume	100
Issue number	PART 4
DOIs	https://doi.org/10.1088/1742-6596/100/4/042042
Publication status	Published - Mar 1 2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.1088/1742-6596/100/4/042042

Cite this

@article{13ba8579895d40549364db02323b9f60,

title = "Structural and electrical characterization of AgInSe2 crystals grown by hot-press method",

abstract = "Undoped polycrystalline AgInSe2 crystals were successfully grown at low temperature (650 °C) using a hot-press method. The sizes of the samples were 2 cm in diameter. The largest grain size was approximately 90 nm. The presence of lattice defects such as Ag interstitials might lead to an enhancement in n-type electrical conductivity. The crystals had a resistivity of 2.2 Ω cm, a carrier concentration of 4.2 × 1016 cm 3 and a mobility of 70 cm2V-1s-1 obtained by Hall measurement at RT.",

author = "Kenji Yoshino and Aya Kinoshita and Yasuhiro Shirahata and Minoru Oshima and Keita Nomoto and Tsuyoshi Yoshitake and Shunji Ozaki and Tetsuo Ikari",

note = "Funding Information: This work was partly supported by The Iwatani Naoji Foundation{\textquoteright}s Research Grant.",

year = "2008",

month = mar,

day = "1",

doi = "10.1088/1742-6596/100/4/042042",

language = "English",

volume = "100",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "PART 4",

}

TY - JOUR

T1 - Structural and electrical characterization of AgInSe2 crystals grown by hot-press method

AU - Yoshino, Kenji

AU - Kinoshita, Aya

AU - Shirahata, Yasuhiro

AU - Oshima, Minoru

AU - Nomoto, Keita

AU - Yoshitake, Tsuyoshi

AU - Ozaki, Shunji

AU - Ikari, Tetsuo

N1 - Funding Information: This work was partly supported by The Iwatani Naoji Foundation’s Research Grant.

PY - 2008/3/1

Y1 - 2008/3/1

N2 - Undoped polycrystalline AgInSe2 crystals were successfully grown at low temperature (650 °C) using a hot-press method. The sizes of the samples were 2 cm in diameter. The largest grain size was approximately 90 nm. The presence of lattice defects such as Ag interstitials might lead to an enhancement in n-type electrical conductivity. The crystals had a resistivity of 2.2 Ω cm, a carrier concentration of 4.2 × 1016 cm 3 and a mobility of 70 cm2V-1s-1 obtained by Hall measurement at RT.

AB - Undoped polycrystalline AgInSe2 crystals were successfully grown at low temperature (650 °C) using a hot-press method. The sizes of the samples were 2 cm in diameter. The largest grain size was approximately 90 nm. The presence of lattice defects such as Ag interstitials might lead to an enhancement in n-type electrical conductivity. The crystals had a resistivity of 2.2 Ω cm, a carrier concentration of 4.2 × 1016 cm 3 and a mobility of 70 cm2V-1s-1 obtained by Hall measurement at RT.

UR - http://www.scopus.com/inward/record.url?scp=77954342813&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954342813&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/100/4/042042

DO - 10.1088/1742-6596/100/4/042042

M3 - Article

AN - SCOPUS:77954342813

SN - 1742-6588

VL - 100

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - PART 4

M1 - 042042

ER -

Structural and electrical characterization of AgInSe₂ crystals grown by hot-press method

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this