Structural and electrical characterization of AgInSe2 crystals grown by hot-press method

Kenji Yoshino, Aya Kinoshita, Yasuhiro Shirahata, Minoru Oshima, Keita Nomoto, Tsuyoshi Yoshitake, Shunji Ozaki, Tetsuo Ikari

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    18 Citations (Scopus)


    Undoped polycrystalline AgInSe2 crystals were successfully grown at low temperature (650 °C) using a hot-press method. The sizes of the samples were 2 cm in diameter. The largest grain size was approximately 90 nm. The presence of lattice defects such as Ag interstitials might lead to an enhancement in n-type electrical conductivity. The crystals had a resistivity of 2.2 Ω cm, a carrier concentration of 4.2 × 1016 cm 3 and a mobility of 70 cm2V-1s-1 obtained by Hall measurement at RT.

    Original languageEnglish
    Article number042042
    JournalJournal of Physics: Conference Series
    Issue numberPART 4
    Publication statusPublished - Mar 1 2008

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy(all)

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