Structural and electrical characterization of AgInSe2 crystals grown by hot-press method

Kenji Yoshino, Aya Kinoshita, Yasuhiro Shirahata, Minoru Oshima, Keita Nomoto, Tsuyoshi Yoshitake, Shunji Ozaki, Tetsuo Ikari

    Research output: Contribution to journalArticle

    15 Citations (Scopus)

    Abstract

    Undoped polycrystalline AgInSe2 crystals were successfully grown at low temperature (650 °C) using a hot-press method. The sizes of the samples were 2 cm in diameter. The largest grain size was approximately 90 nm. The presence of lattice defects such as Ag interstitials might lead to an enhancement in n-type electrical conductivity. The crystals had a resistivity of 2.2 Ω cm, a carrier concentration of 4.2 × 1016 cm 3 and a mobility of 70 cm2V-1s-1 obtained by Hall measurement at RT.

    Original languageEnglish
    Article number042042
    JournalJournal of Physics: Conference Series
    Volume100
    Issue numberPART 4
    DOIs
    Publication statusPublished - Mar 1 2008

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    electrical resistivity
    crystals
    interstitials
    grain size
    augmentation
    defects

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy(all)

    Cite this

    Structural and electrical characterization of AgInSe2 crystals grown by hot-press method. / Yoshino, Kenji; Kinoshita, Aya; Shirahata, Yasuhiro; Oshima, Minoru; Nomoto, Keita; Yoshitake, Tsuyoshi; Ozaki, Shunji; Ikari, Tetsuo.

    In: Journal of Physics: Conference Series, Vol. 100, No. PART 4, 042042, 01.03.2008.

    Research output: Contribution to journalArticle

    Yoshino, K, Kinoshita, A, Shirahata, Y, Oshima, M, Nomoto, K, Yoshitake, T, Ozaki, S & Ikari, T 2008, 'Structural and electrical characterization of AgInSe2 crystals grown by hot-press method', Journal of Physics: Conference Series, vol. 100, no. PART 4, 042042. https://doi.org/10.1088/1742-6596/100/4/042042
    Yoshino, Kenji ; Kinoshita, Aya ; Shirahata, Yasuhiro ; Oshima, Minoru ; Nomoto, Keita ; Yoshitake, Tsuyoshi ; Ozaki, Shunji ; Ikari, Tetsuo. / Structural and electrical characterization of AgInSe2 crystals grown by hot-press method. In: Journal of Physics: Conference Series. 2008 ; Vol. 100, No. PART 4.
    @article{13ba8579895d40549364db02323b9f60,
    title = "Structural and electrical characterization of AgInSe2 crystals grown by hot-press method",
    abstract = "Undoped polycrystalline AgInSe2 crystals were successfully grown at low temperature (650 °C) using a hot-press method. The sizes of the samples were 2 cm in diameter. The largest grain size was approximately 90 nm. The presence of lattice defects such as Ag interstitials might lead to an enhancement in n-type electrical conductivity. The crystals had a resistivity of 2.2 Ω cm, a carrier concentration of 4.2 × 1016 cm 3 and a mobility of 70 cm2V-1s-1 obtained by Hall measurement at RT.",
    author = "Kenji Yoshino and Aya Kinoshita and Yasuhiro Shirahata and Minoru Oshima and Keita Nomoto and Tsuyoshi Yoshitake and Shunji Ozaki and Tetsuo Ikari",
    year = "2008",
    month = "3",
    day = "1",
    doi = "10.1088/1742-6596/100/4/042042",
    language = "English",
    volume = "100",
    journal = "Journal of Physics: Conference Series",
    issn = "1742-6588",
    publisher = "IOP Publishing Ltd.",
    number = "PART 4",

    }

    TY - JOUR

    T1 - Structural and electrical characterization of AgInSe2 crystals grown by hot-press method

    AU - Yoshino, Kenji

    AU - Kinoshita, Aya

    AU - Shirahata, Yasuhiro

    AU - Oshima, Minoru

    AU - Nomoto, Keita

    AU - Yoshitake, Tsuyoshi

    AU - Ozaki, Shunji

    AU - Ikari, Tetsuo

    PY - 2008/3/1

    Y1 - 2008/3/1

    N2 - Undoped polycrystalline AgInSe2 crystals were successfully grown at low temperature (650 °C) using a hot-press method. The sizes of the samples were 2 cm in diameter. The largest grain size was approximately 90 nm. The presence of lattice defects such as Ag interstitials might lead to an enhancement in n-type electrical conductivity. The crystals had a resistivity of 2.2 Ω cm, a carrier concentration of 4.2 × 1016 cm 3 and a mobility of 70 cm2V-1s-1 obtained by Hall measurement at RT.

    AB - Undoped polycrystalline AgInSe2 crystals were successfully grown at low temperature (650 °C) using a hot-press method. The sizes of the samples were 2 cm in diameter. The largest grain size was approximately 90 nm. The presence of lattice defects such as Ag interstitials might lead to an enhancement in n-type electrical conductivity. The crystals had a resistivity of 2.2 Ω cm, a carrier concentration of 4.2 × 1016 cm 3 and a mobility of 70 cm2V-1s-1 obtained by Hall measurement at RT.

    UR - http://www.scopus.com/inward/record.url?scp=77954342813&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=77954342813&partnerID=8YFLogxK

    U2 - 10.1088/1742-6596/100/4/042042

    DO - 10.1088/1742-6596/100/4/042042

    M3 - Article

    AN - SCOPUS:77954342813

    VL - 100

    JO - Journal of Physics: Conference Series

    JF - Journal of Physics: Conference Series

    SN - 1742-6588

    IS - PART 4

    M1 - 042042

    ER -