Structural and electrical characterization of AgInSe2 crystals grown by hot-press method

K. Yoshino, A. Kinoshita, Y. Shirahata, M. Oshima, K. Nomoto, T. Yoshitake, S. Ozaki, T. Ikari

    Research output: Contribution to journalConference articlepeer-review

    Abstract

    Undoped polycrystalline AgInSe2 crystals were successfully grown at low temperature (650°C) using a hot-press method. The sizes of the samples were 2 cm in diameter. The largest grain size was approximately 90 nm. The presence of lattice defects such as Ag interstitials might lead to an enhancement in n-type electrical conductivity. The crystals had a resistivity of 2.2 Ω cm, a carrier concentration of 4.2 × 1016 cm3 and a mobility of 70 cm2V-1s-1 obtained by Hall measurement at RT.

    Original languageEnglish
    Article number042042
    JournalJournal of Physics: Conference Series
    Volume100
    Issue numberPart 4
    DOIs
    Publication statusPublished - Mar 27 2008
    Event17th International Vacuum Congress, IVC 2007, 13th International Conference on Surface Science, ICSS 2007 and International Conference on Nanoscience and Technology, ICN+T 2007 - Stockholm, Sweden
    Duration: Jul 2 2007Jul 6 2007

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy(all)

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