Structural and electrical evaluation for strained Si/SiGe on insulator

Dong Wang, Seiichiro Ii, Ken ichi Ikeda, Hideharu Nakashima, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Three strained Si/SiGe on insulator wafers having different Ge fractions were evaluated using dual-metal-oxide-semiconductor (dual-MOS) deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM) methods. The interface of SiGe/buried oxide (BOX) shows roughness less than 1 nm by high resolution TEM observation. The interface states densities (Dit) of SiGe/BOX are approximately 1 × 1012 cm- 2 eV- 1, which is approximately one order of magnitude higher than that of Si/BOX in a Si on insulator wafer measured as reference by the same method of dual-MOS DLTS. The high Dit of SiGe/BOX is not due to interface roughness but due to Ge atoms. The threading dislocations were also clearly observed by TEM and were analyzed.

Original languageEnglish
Pages (from-to)107-111
Number of pages5
JournalThin Solid Films
Volume508
Issue number1-2
DOIs
Publication statusPublished - Jun 5 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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