Structural and electrical evaluation for strained Si/SiGe on insulator

Dong Wang, Seiichiro Ii, Ken ichi Ikeda, Hideharu Nakashima, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Three strained Si/SiGe on insulator wafers having different Ge fractions were evaluated using dual-metal-oxide-semiconductor (dual-MOS) deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM) methods. The interface of SiGe/buried oxide (BOX) shows roughness less than 1 nm by high resolution TEM observation. The interface states densities (Dit) of SiGe/BOX are approximately 1 × 1012 cm- 2 eV- 1, which is approximately one order of magnitude higher than that of Si/BOX in a Si on insulator wafer measured as reference by the same method of dual-MOS DLTS. The high Dit of SiGe/BOX is not due to interface roughness but due to Ge atoms. The threading dislocations were also clearly observed by TEM and were analyzed.

Original languageEnglish
Pages (from-to)107-111
Number of pages5
JournalThin Solid Films
Volume508
Issue number1-2
DOIs
Publication statusPublished - Jun 5 2006

Fingerprint

Oxides
insulators
Deep level transient spectroscopy
oxides
evaluation
metal oxide semiconductors
transmission electron microscopy
roughness
Surface roughness
Metals
wafers
Transmission electron microscopy
Interface states
High resolution transmission electron microscopy
spectroscopy
Atoms
high resolution
atoms
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Structural and electrical evaluation for strained Si/SiGe on insulator. / Wang, Dong; Ii, Seiichiro; Ikeda, Ken ichi; Nakashima, Hideharu; Ninomiya, Masaharu; Nakamae, Masahiko; Nakashima, Hiroshi.

In: Thin Solid Films, Vol. 508, No. 1-2, 05.06.2006, p. 107-111.

Research output: Contribution to journalArticle

Wang, Dong ; Ii, Seiichiro ; Ikeda, Ken ichi ; Nakashima, Hideharu ; Ninomiya, Masaharu ; Nakamae, Masahiko ; Nakashima, Hiroshi. / Structural and electrical evaluation for strained Si/SiGe on insulator. In: Thin Solid Films. 2006 ; Vol. 508, No. 1-2. pp. 107-111.
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AU - Nakamae, Masahiko

AU - Nakashima, Hiroshi

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