Structural and optical characterization of semiconducting TiN nanoparticles thin film

Sakae Tanemura, Lei Miao, Yoichi Kajino, Masaki Tanemura, Shoichi Toh, Kenji Kaneko, Yukimasa Mori

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have succeeded in fabricating a thin film consisting of semiconducing TiN nanoparticles soft-landed on a substrate at room temperature using N 2 reactive magnetron sputtering combined with a gas aggregation method. The total film thickness is about 1200nm. Under the optimized experimental parameters for controlling the growth of TiN particles, the average diameter of TiN nanoparticles is 2.54nm and their diameter distribution is from 1.1 to 3.8 nm. X-ray photoelectron spectroscopy (XPS) study reveals that the fabricated semiconducting TiN has N vacancies and/or defects as Ti xN1-x. The average lattice constant of the TiN particulates is estimated as 4.216 Å and contracted by 0.6% from that of bulk TiN, which is presumably caused by the vacancies and/or defects. Spectroscopic ellipsometry (SE) study revealed that the imaginary part of the dielectric constant of the present film shows typical semiconducting behavior and gives the optical band gap of the film as 3.65 eV in direct allowed optical transition mode.

Original languageEnglish
Pages (from-to)356-361
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number1
DOIs
Publication statusPublished - Jan 10 2007

Fingerprint

Vacancies
Nanoparticles
Thin films
nanoparticles
Defects
Optical transitions
Spectroscopic ellipsometry
Reactive sputtering
Optical band gaps
defects
thin films
optical transition
Magnetron sputtering
particulates
Lattice constants
ellipsometry
Film thickness
magnetron sputtering
Permittivity
film thickness

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Structural and optical characterization of semiconducting TiN nanoparticles thin film. / Tanemura, Sakae; Miao, Lei; Kajino, Yoichi; Tanemura, Masaki; Toh, Shoichi; Kaneko, Kenji; Mori, Yukimasa.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 1, 10.01.2007, p. 356-361.

Research output: Contribution to journalArticle

Tanemura, Sakae ; Miao, Lei ; Kajino, Yoichi ; Tanemura, Masaki ; Toh, Shoichi ; Kaneko, Kenji ; Mori, Yukimasa. / Structural and optical characterization of semiconducting TiN nanoparticles thin film. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2007 ; Vol. 46, No. 1. pp. 356-361.
@article{6421c6b179734b72bf135e76d5fbbaa6,
title = "Structural and optical characterization of semiconducting TiN nanoparticles thin film",
abstract = "We have succeeded in fabricating a thin film consisting of semiconducing TiN nanoparticles soft-landed on a substrate at room temperature using N 2 reactive magnetron sputtering combined with a gas aggregation method. The total film thickness is about 1200nm. Under the optimized experimental parameters for controlling the growth of TiN particles, the average diameter of TiN nanoparticles is 2.54nm and their diameter distribution is from 1.1 to 3.8 nm. X-ray photoelectron spectroscopy (XPS) study reveals that the fabricated semiconducting TiN has N vacancies and/or defects as Ti xN1-x. The average lattice constant of the TiN particulates is estimated as 4.216 {\AA} and contracted by 0.6{\%} from that of bulk TiN, which is presumably caused by the vacancies and/or defects. Spectroscopic ellipsometry (SE) study revealed that the imaginary part of the dielectric constant of the present film shows typical semiconducting behavior and gives the optical band gap of the film as 3.65 eV in direct allowed optical transition mode.",
author = "Sakae Tanemura and Lei Miao and Yoichi Kajino and Masaki Tanemura and Shoichi Toh and Kenji Kaneko and Yukimasa Mori",
year = "2007",
month = "1",
day = "10",
doi = "10.1143/JJAP.46.356",
language = "English",
volume = "46",
pages = "356--361",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "1",

}

TY - JOUR

T1 - Structural and optical characterization of semiconducting TiN nanoparticles thin film

AU - Tanemura, Sakae

AU - Miao, Lei

AU - Kajino, Yoichi

AU - Tanemura, Masaki

AU - Toh, Shoichi

AU - Kaneko, Kenji

AU - Mori, Yukimasa

PY - 2007/1/10

Y1 - 2007/1/10

N2 - We have succeeded in fabricating a thin film consisting of semiconducing TiN nanoparticles soft-landed on a substrate at room temperature using N 2 reactive magnetron sputtering combined with a gas aggregation method. The total film thickness is about 1200nm. Under the optimized experimental parameters for controlling the growth of TiN particles, the average diameter of TiN nanoparticles is 2.54nm and their diameter distribution is from 1.1 to 3.8 nm. X-ray photoelectron spectroscopy (XPS) study reveals that the fabricated semiconducting TiN has N vacancies and/or defects as Ti xN1-x. The average lattice constant of the TiN particulates is estimated as 4.216 Å and contracted by 0.6% from that of bulk TiN, which is presumably caused by the vacancies and/or defects. Spectroscopic ellipsometry (SE) study revealed that the imaginary part of the dielectric constant of the present film shows typical semiconducting behavior and gives the optical band gap of the film as 3.65 eV in direct allowed optical transition mode.

AB - We have succeeded in fabricating a thin film consisting of semiconducing TiN nanoparticles soft-landed on a substrate at room temperature using N 2 reactive magnetron sputtering combined with a gas aggregation method. The total film thickness is about 1200nm. Under the optimized experimental parameters for controlling the growth of TiN particles, the average diameter of TiN nanoparticles is 2.54nm and their diameter distribution is from 1.1 to 3.8 nm. X-ray photoelectron spectroscopy (XPS) study reveals that the fabricated semiconducting TiN has N vacancies and/or defects as Ti xN1-x. The average lattice constant of the TiN particulates is estimated as 4.216 Å and contracted by 0.6% from that of bulk TiN, which is presumably caused by the vacancies and/or defects. Spectroscopic ellipsometry (SE) study revealed that the imaginary part of the dielectric constant of the present film shows typical semiconducting behavior and gives the optical band gap of the film as 3.65 eV in direct allowed optical transition mode.

UR - http://www.scopus.com/inward/record.url?scp=34547865065&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547865065&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.356

DO - 10.1143/JJAP.46.356

M3 - Article

AN - SCOPUS:34547865065

VL - 46

SP - 356

EP - 361

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 1

ER -