Structural and optical properties of AlN grown on AlN(0001) by the solid source solution growth (3SG) method were investigated. Transmission electron microscopy (TEM) analysis revealed that the geometrical relationship between the growth directions and slip planes influenced the dislocation propagation behaviors and annihilation mechanisms. Panchromatic and monochromatic images in the cathodoluminescence (CL) spectrum further revealed that C impurities were segregated near the surface, while Al vacancies were widely distributed in the AlN/AlN(0001) grown using the 3SG method.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)