TY - JOUR
T1 - Structural and thermoelectric properties of Cu6Fe 4Sn12Se32 single crystal
AU - Suekuni, K.
AU - Tsuruta, K.
AU - Fukuoka, H.
AU - Koyano, M.
N1 - Funding Information:
We are grateful to M. Kunii, M. Ohta, and A. Yamamoto for high-temperature TE properties measurements and valuable discussion and to K. Akai for fruitful discussion. This work was supported financially by a Grant-in-Aid for Research Activity Start-up (Grant No. 22840021 ) from JSPS and by a Grant from the Thermal and Electric Energy Technology Foundation, Japan .
PY - 2013/7/5
Y1 - 2013/7/5
N2 - We present structural and thermoelectric properties of quaternary selenide Cu6Fe4Sn12Se32 single crystal. Single crystal X-ray structural analysis revealed that Cu6Fe 4Sn12Se32 has the cubic thiospinel structure. Low-temperature logarithmic electrical resistivity ln ρ exhibits Mott's T-1/4 dependence, indicating that three-dimensional variable-range hopping (VRH) is the dominant electrical conduction mechanism. Furthermore, Efros' T-1/2 dependence of ln ρ appears below 30 K. Thermopower S varies as T1/2 at low temperatures, as expected for the VRH conduction, and reaches 150 μV/K at 300 K. Result of Hall measurement indicates that rather low ρ for a VRH conductor and the large S are attributed to high carrier density and large slope of electron density of states, respectively.
AB - We present structural and thermoelectric properties of quaternary selenide Cu6Fe4Sn12Se32 single crystal. Single crystal X-ray structural analysis revealed that Cu6Fe 4Sn12Se32 has the cubic thiospinel structure. Low-temperature logarithmic electrical resistivity ln ρ exhibits Mott's T-1/4 dependence, indicating that three-dimensional variable-range hopping (VRH) is the dominant electrical conduction mechanism. Furthermore, Efros' T-1/2 dependence of ln ρ appears below 30 K. Thermopower S varies as T1/2 at low temperatures, as expected for the VRH conduction, and reaches 150 μV/K at 300 K. Result of Hall measurement indicates that rather low ρ for a VRH conductor and the large S are attributed to high carrier density and large slope of electron density of states, respectively.
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U2 - 10.1016/j.jallcom.2013.02.032
DO - 10.1016/j.jallcom.2013.02.032
M3 - Article
AN - SCOPUS:84875195101
SN - 0925-8388
VL - 564
SP - 91
EP - 94
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
ER -