A study was performed on the structural anisotropy in gallium nitride (GaN) films. The films were investigated in terms of nucleation, coalescence and growth front evolution. The effects of silicon carbide (SiC) surface configuration on GaN film growth physics were examined. The results showed an anisotropic characteristic for the GaN film deposited on the vicinal stepped SiC surfaces.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)