Structural anisotropy in GaN films grown on vicinal 4H-SiC surfaces by metallorganic molecular-beam epitaxy

Jun Ichi Kato, Satoru Tanaka, Satoshi Yamada, Ikuo Suemune

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

A study was performed on the structural anisotropy in gallium nitride (GaN) films. The films were investigated in terms of nucleation, coalescence and growth front evolution. The effects of silicon carbide (SiC) surface configuration on GaN film growth physics were examined. The results showed an anisotropic characteristic for the GaN film deposited on the vicinal stepped SiC surfaces.

Original languageEnglish
Pages (from-to)1569-1571
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number8
DOIs
Publication statusPublished - Aug 25 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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