Structural characterization of silicon carbide etched by using a combination of ion implantation and wet chemical etching

T. Henkel, G. Ferro, Shinichi Nishizawa, H. Pressler, Y. Tanaka, H. Tanoue, N. Kobayashi

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Silicon carbide has been etched using a combination of high-dose ion implantation and wet chemical etching. Structural properties with respect to the remaining damage after etching have been studied using atomic force microscopy, Rutherford backscattering/channeling, and Raman spectroscopy. No significant deterioration of the crystal quality has been found after the etching process. Moreover, the as-etched surface is characterized by a lower roughness compared to virgin material. The results demonstrate that this etching method can be used for the fabrication of contacts on silicon carbide surfaces.

Original languageEnglish
JournalMaterials Science Forum
Volume338
Publication statusPublished - Jan 1 2000
Externally publishedYes
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

Fingerprint

Wet etching
Silicon carbide
Ion implantation
silicon carbides
ion implantation
Etching
etching
Rutherford backscattering spectroscopy
Deterioration
Raman spectroscopy
Structural properties
Atomic force microscopy
Surface roughness
deterioration
Fabrication
backscattering
Crystals
roughness
atomic force microscopy
damage

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Structural characterization of silicon carbide etched by using a combination of ion implantation and wet chemical etching. / Henkel, T.; Ferro, G.; Nishizawa, Shinichi; Pressler, H.; Tanaka, Y.; Tanoue, H.; Kobayashi, N.

In: Materials Science Forum, Vol. 338, 01.01.2000.

Research output: Contribution to journalConference article

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AU - Tanaka, Y.

AU - Tanoue, H.

AU - Kobayashi, N.

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