Structural characterization of silicon carbide etched by using a combination of ion implantation and wet chemical etching

T. Henkel, G. Ferro, S. Nishizawa, H. Pressler, Y. Tanaka, H. Tanoue, N. Kobayashi

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Silicon carbide has been etched using a combination of high-dose ion implantation and wet chemical etching. Structural properties with respect to the remaining damage after etching have been studied using atomic force microscopy, Rutherford backscattering/channeling, and Raman spectroscopy. No significant deterioration of the crystal quality has been found after the etching process. Moreover, the as-etched surface is characterized by a lower roughness compared to virgin material. The results demonstrate that this etching method can be used for the fabrication of contacts on silicon carbide surfaces.

Original languageEnglish
Pages (from-to)I/-
JournalMaterials Science Forum
Volume338
Publication statusPublished - 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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