Structural, dielectric, and piezoelectric properties of mn-doped BaTiO 3-Bi(Mg1/2Ti1/2)O3-BiFeO 3 ceramics

Ichiro Fujii, Ryuta Mitsui, Kouichi Nakashima, Nobuhiro Kumada, Mikio Shimada, Takayuki Watanabe, Jumpei Hayashi, Hisato Yabuta, Makoto Kubota, Tetsuro Fukui, Satoshi Wada

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

Mn-doped (0.9 - x)BaTiO3-0.1Bi(Mg1/2Ti 1/2)O3-xBiFeO3 (x = 0.6, 0.7, and 0.8) ceramics were studied as candidate lead-free piezoelectric materials. The crystal structures were a pseudo-cubic perovskite at x = 0.6, a rhombohedral perovskite at x = 0.8, and a mixture of the pseudocubic and rhombohedral perovskite at x = 0.7. The Curie temperature was found to be 470 °C at x = 0.6 and more than 600 °C at x = 0.7 and 0.8. A strong pinning of domain walls was observed for high-field responses at x = 0.7 and 0.8, which was relaxed by high-temperature annealing and subsequent quenching. Piezoelectric properties increased with decreasing x, and the small-field piezoelectric constants d33 and d31 were 94 and 31 pC/N at x = 0:6, respectively.

Original languageEnglish
Article number09ND07
JournalJapanese Journal of Applied Physics
Volume50
Issue number9 PART 3
DOIs
Publication statusPublished - Sep 2011
Externally publishedYes

Fingerprint

Perovskite
domain wall
dielectric properties
Curie temperature
quenching
ceramics
crystal structure
annealing
Piezoelectric materials
Domain walls
Quenching
Lead
Crystal structure
Annealing
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Structural, dielectric, and piezoelectric properties of mn-doped BaTiO 3-Bi(Mg1/2Ti1/2)O3-BiFeO 3 ceramics. / Fujii, Ichiro; Mitsui, Ryuta; Nakashima, Kouichi; Kumada, Nobuhiro; Shimada, Mikio; Watanabe, Takayuki; Hayashi, Jumpei; Yabuta, Hisato; Kubota, Makoto; Fukui, Tetsuro; Wada, Satoshi.

In: Japanese Journal of Applied Physics, Vol. 50, No. 9 PART 3, 09ND07, 09.2011.

Research output: Contribution to journalArticle

Fujii, I, Mitsui, R, Nakashima, K, Kumada, N, Shimada, M, Watanabe, T, Hayashi, J, Yabuta, H, Kubota, M, Fukui, T & Wada, S 2011, 'Structural, dielectric, and piezoelectric properties of mn-doped BaTiO 3-Bi(Mg1/2Ti1/2)O3-BiFeO 3 ceramics', Japanese Journal of Applied Physics, vol. 50, no. 9 PART 3, 09ND07. https://doi.org/10.1143/JJAP.50.09ND07
Fujii, Ichiro ; Mitsui, Ryuta ; Nakashima, Kouichi ; Kumada, Nobuhiro ; Shimada, Mikio ; Watanabe, Takayuki ; Hayashi, Jumpei ; Yabuta, Hisato ; Kubota, Makoto ; Fukui, Tetsuro ; Wada, Satoshi. / Structural, dielectric, and piezoelectric properties of mn-doped BaTiO 3-Bi(Mg1/2Ti1/2)O3-BiFeO 3 ceramics. In: Japanese Journal of Applied Physics. 2011 ; Vol. 50, No. 9 PART 3.
@article{29e6649f99ee4861a0e114c412851385,
title = "Structural, dielectric, and piezoelectric properties of mn-doped BaTiO 3-Bi(Mg1/2Ti1/2)O3-BiFeO 3 ceramics",
abstract = "Mn-doped (0.9 - x)BaTiO3-0.1Bi(Mg1/2Ti 1/2)O3-xBiFeO3 (x = 0.6, 0.7, and 0.8) ceramics were studied as candidate lead-free piezoelectric materials. The crystal structures were a pseudo-cubic perovskite at x = 0.6, a rhombohedral perovskite at x = 0.8, and a mixture of the pseudocubic and rhombohedral perovskite at x = 0.7. The Curie temperature was found to be 470 °C at x = 0.6 and more than 600 °C at x = 0.7 and 0.8. A strong pinning of domain walls was observed for high-field responses at x = 0.7 and 0.8, which was relaxed by high-temperature annealing and subsequent quenching. Piezoelectric properties increased with decreasing x, and the small-field piezoelectric constants d33 and d31 were 94 and 31 pC/N at x = 0:6, respectively.",
author = "Ichiro Fujii and Ryuta Mitsui and Kouichi Nakashima and Nobuhiro Kumada and Mikio Shimada and Takayuki Watanabe and Jumpei Hayashi and Hisato Yabuta and Makoto Kubota and Tetsuro Fukui and Satoshi Wada",
year = "2011",
month = "9",
doi = "10.1143/JJAP.50.09ND07",
language = "English",
volume = "50",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "9 PART 3",

}

TY - JOUR

T1 - Structural, dielectric, and piezoelectric properties of mn-doped BaTiO 3-Bi(Mg1/2Ti1/2)O3-BiFeO 3 ceramics

AU - Fujii, Ichiro

AU - Mitsui, Ryuta

AU - Nakashima, Kouichi

AU - Kumada, Nobuhiro

AU - Shimada, Mikio

AU - Watanabe, Takayuki

AU - Hayashi, Jumpei

AU - Yabuta, Hisato

AU - Kubota, Makoto

AU - Fukui, Tetsuro

AU - Wada, Satoshi

PY - 2011/9

Y1 - 2011/9

N2 - Mn-doped (0.9 - x)BaTiO3-0.1Bi(Mg1/2Ti 1/2)O3-xBiFeO3 (x = 0.6, 0.7, and 0.8) ceramics were studied as candidate lead-free piezoelectric materials. The crystal structures were a pseudo-cubic perovskite at x = 0.6, a rhombohedral perovskite at x = 0.8, and a mixture of the pseudocubic and rhombohedral perovskite at x = 0.7. The Curie temperature was found to be 470 °C at x = 0.6 and more than 600 °C at x = 0.7 and 0.8. A strong pinning of domain walls was observed for high-field responses at x = 0.7 and 0.8, which was relaxed by high-temperature annealing and subsequent quenching. Piezoelectric properties increased with decreasing x, and the small-field piezoelectric constants d33 and d31 were 94 and 31 pC/N at x = 0:6, respectively.

AB - Mn-doped (0.9 - x)BaTiO3-0.1Bi(Mg1/2Ti 1/2)O3-xBiFeO3 (x = 0.6, 0.7, and 0.8) ceramics were studied as candidate lead-free piezoelectric materials. The crystal structures were a pseudo-cubic perovskite at x = 0.6, a rhombohedral perovskite at x = 0.8, and a mixture of the pseudocubic and rhombohedral perovskite at x = 0.7. The Curie temperature was found to be 470 °C at x = 0.6 and more than 600 °C at x = 0.7 and 0.8. A strong pinning of domain walls was observed for high-field responses at x = 0.7 and 0.8, which was relaxed by high-temperature annealing and subsequent quenching. Piezoelectric properties increased with decreasing x, and the small-field piezoelectric constants d33 and d31 were 94 and 31 pC/N at x = 0:6, respectively.

UR - http://www.scopus.com/inward/record.url?scp=80053085850&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80053085850&partnerID=8YFLogxK

U2 - 10.1143/JJAP.50.09ND07

DO - 10.1143/JJAP.50.09ND07

M3 - Article

AN - SCOPUS:80053085850

VL - 50

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 9 PART 3

M1 - 09ND07

ER -