Structural improvement of nickel metal-induced-lateral-crystallized silicon films using excimer laser annealing

M. Miyasaka, K. Makihira, Tanemasa Asano, J. Stoemenos

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Crystalline properties of nickel metalinduced- lateral-crystallized (Ni-MILC) silicon films are examined in detail. Laterally grown crystalline grains can be as large as 19 μm, though the grains consist of small misorientated sub-grains. The excimer laser annealing (ELA) method definitely improves Ni-MILC film quality. As a result, fairly good polysilicon thin film transistors are easily fabricated through a low-temperature process. It is, however, difficult to completely eliminate the subgrains by simply applying the ELA method to Ni-MILC silicon films.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
EditorsHeiner Ryssel, Gerhard Wachutka, Herbert Grunbacher
PublisherIEEE Computer Society
Pages123-126
Number of pages4
ISBN (Electronic)2914601018
DOIs
Publication statusPublished - Jan 1 2001
Event31st European Solid-State Device Research Conference, ESSDERC 2001 - Nuremberg, Germany
Duration: Sep 11 2001Sep 13 2001

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other31st European Solid-State Device Research Conference, ESSDERC 2001
CountryGermany
CityNuremberg
Period9/11/019/13/01

Fingerprint

Excimer lasers
Nickel
Annealing
Silicon
Metals
Crystalline materials
Thin film transistors
Polysilicon
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Miyasaka, M., Makihira, K., Asano, T., & Stoemenos, J. (2001). Structural improvement of nickel metal-induced-lateral-crystallized silicon films using excimer laser annealing. In H. Ryssel, G. Wachutka, & H. Grunbacher (Eds.), European Solid-State Device Research Conference (pp. 123-126). (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2001.195216

Structural improvement of nickel metal-induced-lateral-crystallized silicon films using excimer laser annealing. / Miyasaka, M.; Makihira, K.; Asano, Tanemasa; Stoemenos, J.

European Solid-State Device Research Conference. ed. / Heiner Ryssel; Gerhard Wachutka; Herbert Grunbacher. IEEE Computer Society, 2001. p. 123-126 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Miyasaka, M, Makihira, K, Asano, T & Stoemenos, J 2001, Structural improvement of nickel metal-induced-lateral-crystallized silicon films using excimer laser annealing. in H Ryssel, G Wachutka & H Grunbacher (eds), European Solid-State Device Research Conference. European Solid-State Device Research Conference, IEEE Computer Society, pp. 123-126, 31st European Solid-State Device Research Conference, ESSDERC 2001, Nuremberg, Germany, 9/11/01. https://doi.org/10.1109/ESSDERC.2001.195216
Miyasaka M, Makihira K, Asano T, Stoemenos J. Structural improvement of nickel metal-induced-lateral-crystallized silicon films using excimer laser annealing. In Ryssel H, Wachutka G, Grunbacher H, editors, European Solid-State Device Research Conference. IEEE Computer Society. 2001. p. 123-126. (European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2001.195216
Miyasaka, M. ; Makihira, K. ; Asano, Tanemasa ; Stoemenos, J. / Structural improvement of nickel metal-induced-lateral-crystallized silicon films using excimer laser annealing. European Solid-State Device Research Conference. editor / Heiner Ryssel ; Gerhard Wachutka ; Herbert Grunbacher. IEEE Computer Society, 2001. pp. 123-126 (European Solid-State Device Research Conference).
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