@inproceedings{8f1b57c477b241139e2c21195aa102d0,
title = "Structural improvement of nickel metal-induced-lateral-crystallized silicon films using excimer laser annealing",
abstract = "Crystalline properties of nickel metalinduced- lateral-crystallized (Ni-MILC) silicon films are examined in detail. Laterally grown crystalline grains can be as large as 19 μm, though the grains consist of small misorientated sub-grains. The excimer laser annealing (ELA) method definitely improves Ni-MILC film quality. As a result, fairly good polysilicon thin film transistors are easily fabricated through a low-temperature process. It is, however, difficult to completely eliminate the subgrains by simply applying the ELA method to Ni-MILC silicon films.",
author = "M. Miyasaka and K. Makihira and T. Asano and J. Stoemenos",
year = "2001",
month = jan,
day = "1",
doi = "10.1109/ESSDERC.2001.195216",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "123--126",
editor = "Heiner Ryssel and Gerhard Wachutka and Herbert Grunbacher",
booktitle = "European Solid-State Device Research Conference",
address = "United States",
note = "31st European Solid-State Device Research Conference, ESSDERC 2001 ; Conference date: 11-09-2001 Through 13-09-2001",
}