The geometrical structure of the T-shaped pinning site has been numerically optimized for high density integration of the domain wall based devices. Micromagnetic simulation demonstrates the bit by bit propagation between the pinning sites with 120 nm period, arraigned along a ferromagnetic nanowire with 40 nm-width and 10 nm-thickness. The practical amplitude margin for pulsed fields for bit propagation (60% of the mid value) and the sufficient potential energy well, an order of larger than the ambient thermal energy, are confirmed in the optimized structure.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering