Abstract
The geometrical structure of the T-shaped pinning site has been numerically optimized for high density integration of the domain wall based devices. Micromagnetic simulation demonstrates the bit by bit propagation between the pinning sites with 120 nm period, arraigned along a ferromagnetic nanowire with 40 nm-width and 10 nm-thickness. The practical amplitude margin for pulsed fields for bit propagation (60% of the mid value) and the sufficient potential energy well, an order of larger than the ambient thermal energy, are confirmed in the optimized structure.
| Original language | English |
|---|---|
| Article number | 6332613 |
| Pages (from-to) | 3227-3229 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Magnetics |
| Volume | 48 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - Oct 29 2012 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Structural optimization of pinning sites for high density integration of the domain wall based devices. / Takashima, Teppei; Tanaka, Terumitsu; Matsuyama, Kimihide.
In: IEEE Transactions on Magnetics, Vol. 48, No. 11, 6332613, 29.10.2012, p. 3227-3229.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Structural optimization of pinning sites for high density integration of the domain wall based devices
AU - Takashima, Teppei
AU - Tanaka, Terumitsu
AU - Matsuyama, Kimihide
PY - 2012/10/29
Y1 - 2012/10/29
N2 - The geometrical structure of the T-shaped pinning site has been numerically optimized for high density integration of the domain wall based devices. Micromagnetic simulation demonstrates the bit by bit propagation between the pinning sites with 120 nm period, arraigned along a ferromagnetic nanowire with 40 nm-width and 10 nm-thickness. The practical amplitude margin for pulsed fields for bit propagation (60% of the mid value) and the sufficient potential energy well, an order of larger than the ambient thermal energy, are confirmed in the optimized structure.
AB - The geometrical structure of the T-shaped pinning site has been numerically optimized for high density integration of the domain wall based devices. Micromagnetic simulation demonstrates the bit by bit propagation between the pinning sites with 120 nm period, arraigned along a ferromagnetic nanowire with 40 nm-width and 10 nm-thickness. The practical amplitude margin for pulsed fields for bit propagation (60% of the mid value) and the sufficient potential energy well, an order of larger than the ambient thermal energy, are confirmed in the optimized structure.
UR - http://www.scopus.com/inward/record.url?scp=84867825425&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84867825425&partnerID=8YFLogxK
U2 - 10.1109/TMAG.2012.2202218
DO - 10.1109/TMAG.2012.2202218
M3 - Article
AN - SCOPUS:84867825425
VL - 48
SP - 3227
EP - 3229
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
SN - 0018-9464
IS - 11
M1 - 6332613
ER -