Structural optimization of pinning sites for high density integration of the domain wall based devices

The geometrical structure of the T-shaped pinning site has been numerically optimized for high density integration of the domain wall based devices. Micromagnetic simulation demonstrates the bit by bit propagation between the pinning sites with 120 nm period, arraigned along a ferromagnetic nanowire with 40 nm-width and 10 nm-thickness. The practical amplitude margin for pulsed fields for bit propagation (60% of the mid value) and the sufficient potential energy well, an order of larger than the ambient thermal energy, are confirmed in the optimized structure.