Structural optimization of pinning sites for high density integration of the domain wall based devices

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The geometrical structure of the T-shaped pinning site has been numerically optimized for high density integration of the domain wall based devices. Micromagnetic simulation demonstrates the bit by bit propagation between the pinning sites with 120 nm period, arraigned along a ferromagnetic nanowire with 40 nm-width and 10 nm-thickness. The practical amplitude margin for pulsed fields for bit propagation (60% of the mid value) and the sufficient potential energy well, an order of larger than the ambient thermal energy, are confirmed in the optimized structure.

Original languageEnglish
Article number6332613
Pages (from-to)3227-3229
Number of pages3
JournalIEEE Transactions on Magnetics
Volume48
Issue number11
DOIs
Publication statusPublished - Oct 29 2012

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Structural optimization
Domain walls
Potential energy
Thermal energy
Nanowires

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Structural optimization of pinning sites for high density integration of the domain wall based devices. / Takashima, Teppei; Tanaka, Terumitsu; Matsuyama, Kimihide.

In: IEEE Transactions on Magnetics, Vol. 48, No. 11, 6332613, 29.10.2012, p. 3227-3229.

Research output: Contribution to journalArticle

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