Structural relaxation in silicon at low temperatures

Z. Lu, K. Munakata, A. Kohno, Yuji Soejima, A. Okazaki

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The lattice spacing of a perfect crystal of silicon has been measured by means of X-ray diffraction according to the Bond method coupled with a quadruple-crystal monochromator; measurements were repeated over several thermal cycles in a range from room temperature to 20 K, on cooling and heating, It is found that the lattice spacing depends on thermal treatments of the specimen, in particular those at low temperatures. and that anomalies around 50 K become significant after the thermal cycles. The results suggest the existence of a slow relaxation process for rearranging defects and host atoms in the silicon lattice.

Original languageEnglish
Pages (from-to)220-223
Number of pages4
JournalMaterials Science and Engineering B
Volume34
Issue number2-3
DOIs
Publication statusPublished - Jan 1 1995
Externally publishedYes

Fingerprint

Structural relaxation
Silicon
Crystals
Monochromators
Relaxation processes
silicon
spacing
Crystal lattices
cycles
Heat treatment
monochromators
Cooling
Heating
X ray diffraction
Atoms
Temperature
Defects
crystals
anomalies
cooling

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Structural relaxation in silicon at low temperatures. / Lu, Z.; Munakata, K.; Kohno, A.; Soejima, Yuji; Okazaki, A.

In: Materials Science and Engineering B, Vol. 34, No. 2-3, 01.01.1995, p. 220-223.

Research output: Contribution to journalArticle

Lu, Z. ; Munakata, K. ; Kohno, A. ; Soejima, Yuji ; Okazaki, A. / Structural relaxation in silicon at low temperatures. In: Materials Science and Engineering B. 1995 ; Vol. 34, No. 2-3. pp. 220-223.
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