Structural Relaxation of Amorphous Silicon Carbide

Manabu Ishimaru, In Tae Bae, Yoshihiko Hirotsu, Syo Matsumura, Kurt E. Sickafus

Research output: Contribution to journalArticlepeer-review

113 Citations (Scopus)

Abstract

We have examined amorphous structures of silicon carbide (SiC) using both transmission electron microscopy and a molecular-dynamics approach. Radial distribution functions revealed that amorphous SiC contains not only heteronuclear (Si-C) bonds but also homonuclear (Si-Si and C-C) bonds. The ratio of heteronuclear to homonuclear bonds was found to change upon annealing, suggesting that structural relaxation of the amorphous SiC occurred. Good agreement was obtained between the simulated and experimentally measured radial distribution functions.

Original languageEnglish
JournalPhysical review letters
Volume89
Issue number5
DOIs
Publication statusPublished - 2002

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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