Structural relaxation of MeV ion-implanted silica glasses by thermal annealing

Kohei Fukumi, Akiyoshi Chayahara, Naoyuki Kitamura, Junji Nishii, Yuji Horino, Masaki Makihara, Kanenaga Fujii, Junji Hayakawa

Research output: Contribution to journalArticle

Abstract

Thermal relaxation of Si-O-Si bond angle has been studied in 1 MeV B+-ion, 1 MeV O+-ion and 4 MeV Ni2+-ion implanted silica glasses by infrared reflection and visible and near-infrared reflection spectroscopy. It is found that the change in Si-O-Si bond angle is not proportional to the change in molar volume upon annealing. It is deduced that the relaxation mechanism of Si-O-Si bond angle accompanied by little density change has an activation energy of about 100 kJ mol-1.

Original languageEnglish
Pages (from-to)620-624
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume141
Issue number1-4
DOIs
Publication statusPublished - Jan 1 1998

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All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

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