TY - JOUR
T1 - Structural relaxation of MeV ion-implanted silica glasses by thermal annealing
AU - Fukumi, Kohei
AU - Chayahara, Akiyoshi
AU - Kitamura, Naoyuki
AU - Nishii, Junji
AU - Horino, Yuji
AU - Makihara, Masaki
AU - Fujii, Kanenaga
AU - Hayakawa, Junji
PY - 1998/5
Y1 - 1998/5
N2 - Thermal relaxation of Si-O-Si bond angle has been studied in 1 MeV B+-ion, 1 MeV O+-ion and 4 MeV Ni2+-ion implanted silica glasses by infrared reflection and visible and near-infrared reflection spectroscopy. It is found that the change in Si-O-Si bond angle is not proportional to the change in molar volume upon annealing. It is deduced that the relaxation mechanism of Si-O-Si bond angle accompanied by little density change has an activation energy of about 100 kJ mol-1.
AB - Thermal relaxation of Si-O-Si bond angle has been studied in 1 MeV B+-ion, 1 MeV O+-ion and 4 MeV Ni2+-ion implanted silica glasses by infrared reflection and visible and near-infrared reflection spectroscopy. It is found that the change in Si-O-Si bond angle is not proportional to the change in molar volume upon annealing. It is deduced that the relaxation mechanism of Si-O-Si bond angle accompanied by little density change has an activation energy of about 100 kJ mol-1.
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U2 - 10.1016/S0168-583X(98)00179-7
DO - 10.1016/S0168-583X(98)00179-7
M3 - Article
AN - SCOPUS:0032065935
SN - 0168-583X
VL - 141
SP - 620
EP - 624
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
IS - 1-4
ER -