Thermal relaxation of Si-O-Si bond angle has been studied in 1 MeV B+-ion, 1 MeV O+-ion and 4 MeV Ni2+-ion implanted silica glasses by infrared reflection and visible and near-infrared reflection spectroscopy. It is found that the change in Si-O-Si bond angle is not proportional to the change in molar volume upon annealing. It is deduced that the relaxation mechanism of Si-O-Si bond angle accompanied by little density change has an activation energy of about 100 kJ mol-1.
|Number of pages||5|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - May 1998|
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics