Structural stability and scanning tunneling microscopy images of strained Ge films on Si(001)

Yoshitaka Fujimoto, Atsushi Oshiyama

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

We investigate energetics and scanning tunneling microscopy (STM) images of several Ge films on Si(001) substrates using a first-principles total-energy calculation within the density-functional theory. We calculate the film energies of various Ge films with dimer-vacancy lines (DVL) and 90 â̂̃ dislocation cores (DC) deposited on Si(001) substrate as a function of Ge-layer thickness. Our energetics calculation suggests that 90â̂̃ DC structure becomes stable when sufficiently thick Ge overlayers are deposited on Si(001) substrate. We also calculate the STM images of p(2×2), 2×8 DVL, and 90 â̂̃ DC structures, and we find that STM images of their surface structures are distinguishable from one another.

Original languageEnglish
Article number075323
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume87
Issue number7
DOIs
Publication statusPublished - Feb 27 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Structural stability and scanning tunneling microscopy images of strained Ge films on Si(001)'. Together they form a unique fingerprint.

Cite this