Structural study of small angle grain boundaries in multicrystalline Si

Yoshiji Miyamura, Hirofumi Harada, Shun Ito, Jun Chen, Takashi Sekiguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Small angle grain boundaries (SA-GBs) are known as the most electrically active defects in multicrystalline silicon. These SA-GBs are classified as "general" and "special" by the normal and strong electrical activity at 300K, respectively. In this study, the origins of these electrical activities of SA-GBs were elucidated by using the electron-beam-induced current (EBIC) technique and transmission electron microscopy (TEM). It was found that both general and special SA-GBs were composed of edge-type dislocations and 60 degree dislocations. The fraction of edge dislocation in special SA-GB was higher than that in general one, which suggests that the strong electrical activity mainly originates in edge dislocations.

Original languageEnglish
Title of host publicationDefects-Recognition, Imaging and Physics in Semiconductors XIV
PublisherTrans Tech Publications Ltd
Pages157-160
Number of pages4
ISBN (Print)9783037854426
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14 - Miyazaki, Japan
Duration: Sep 25 2011Sep 29 2011

Publication series

NameMaterials Science Forum
Volume725
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14
Country/TerritoryJapan
CityMiyazaki
Period9/25/119/29/11

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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