Structure and properties of deeply Li-doped Polyacenic Semiconductor (PAS)

Tokio Yamabe, Kazuyoshi Tanaka, Hiroki Ago, Kazunari Yoshizawa, Shizukuni Yata

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

As an anode material of lithium rechargeable battery, amorphous carbon materials have been studied extensively because of their high electrochemical performance. The polyacenic semiconductor (PAS) materials prepared from phenol resin at relatively low temperatures (500-1000 °C) show a highly Li-doped state up to C2Li state without liberation of Li cluster. The Li storage mechanism as well as the large hysteresis observed in the voltage-capacity profile of the amorphous carbon materials are still the subjects of controversy. We review the proposed models of Li storage mechanism and present the results of our molecular orbital (MO) calculations. It will be shown that the nature of Li dopant is strongly dependent on the position of Li dopant. Possibility of the formation of small Li clusters is also discussed.

Original languageEnglish
Pages (from-to)2411-2414
Number of pages4
JournalSynthetic Metals
Volume86
Issue number1-3
Publication statusPublished - Feb 28 1997
Externally publishedYes

Fingerprint

Amorphous carbon
Semiconductor materials
lithium batteries
carbon
Doping (additives)
phenols
Aromatic polymers
resins
Orbital calculations
molecular orbitals
anodes
Secondary batteries
hysteresis
Molecular orbitals
Phenol
Lithium
Phenols
Hysteresis
Anodes
electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

Structure and properties of deeply Li-doped Polyacenic Semiconductor (PAS). / Yamabe, Tokio; Tanaka, Kazuyoshi; Ago, Hiroki; Yoshizawa, Kazunari; Yata, Shizukuni.

In: Synthetic Metals, Vol. 86, No. 1-3, 28.02.1997, p. 2411-2414.

Research output: Contribution to journalArticle

Yamabe, T, Tanaka, K, Ago, H, Yoshizawa, K & Yata, S 1997, 'Structure and properties of deeply Li-doped Polyacenic Semiconductor (PAS)', Synthetic Metals, vol. 86, no. 1-3, pp. 2411-2414.
Yamabe, Tokio ; Tanaka, Kazuyoshi ; Ago, Hiroki ; Yoshizawa, Kazunari ; Yata, Shizukuni. / Structure and properties of deeply Li-doped Polyacenic Semiconductor (PAS). In: Synthetic Metals. 1997 ; Vol. 86, No. 1-3. pp. 2411-2414.
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