Structure changes in a-C:H films in inductive CH4/Ar plasma deposition

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The effects of Ar addition on the structure of a-C:H films have been studied in inductively coupled CH4/Ar plasmas. The deposition rate was determined carefully with an incubation time prior to the film growth. The compressive stress and bonding properties of the films, and the emissive species and total ion flux in the plasmas were examined to find out the relation between the film structure and the bombarding species and flux. The stress increased for the Ar content in the feeding gas from 0 to 0.6, then drastically decreased, together with an increase in the sp phase, for the Ar content exceeding 0.6. The structure changes in the films accompanied by the stress change is discussed in terms of the two competitive Ar content dependent processes; the densification by Ar incorporation into the films and the damage production especially caused by Ar bombardment.

Original languageEnglish
Pages (from-to)103-107
Number of pages5
JournalThin Solid Films
Volume333
Issue number1-2
DOIs
Publication statusPublished - Nov 25 1998
Externally publishedYes

Fingerprint

Plasma deposition
Fluxes
Plasmas
Film growth
Deposition rates
Compressive stress
Densification
densification
Gases
bombardment
Ions
damage
gases
ions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Structure changes in a-C:H films in inductive CH4/Ar plasma deposition. / Teii, Kungen.

In: Thin Solid Films, Vol. 333, No. 1-2, 25.11.1998, p. 103-107.

Research output: Contribution to journalArticle

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