Study of a new system for measuring semiconductor using laser stimulated scattering microscope

T. Tanaka, A. Harata, T. Sawada

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

At the initial part of the transient reflecting grating signal of silicon, a signal attributed to photoexcited carrier was observed apart from thermal and acoustic effects. From theoretical approach, we found that the intensity of the carrier signal was related to the Auger recombination rate. With this signal, we obtained both images representing picosecond-photoexcited carrier concentration and Auger recombination rate of a helium-implanted crystalline silicon (dose, 1015 atoms/cm2).

Original languageEnglish
Pages (from-to)C7-171-174
JournalJournal De Physique
Volume4
Issue number7
Publication statusPublished - Jul 1994
Externally publishedYes
EventProceedings of the 8th International Topical Meeting on Photoacoustic and Photothermal Phenomena - Guadeloupe, Fr
Duration: Jan 22 1994Jan 25 1994

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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