Study of a new system for measuring semiconductor using laser stimulated scattering microscope

T. Tanaka, Akira Harata, T. Sawada

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

At the initial part of the transient reflecting grating signal of silicon, a signal attributed to photoexcited carrier was observed apart from thermal and acoustic effects. From theoretical approach, we found that the intensity of the carrier signal was related to the Auger recombination rate. With this signal, we obtained both images representing picosecond-photoexcited carrier concentration and Auger recombination rate of a helium-implanted crystalline silicon (dose, 1015 atoms/cm2).

Original languageEnglish
JournalJournal De Physique
Volume4
Issue number7
Publication statusPublished - Jul 1994
Externally publishedYes

Fingerprint

Semiconductor lasers
Microscopes
semiconductor lasers
microscopes
Scattering
Silicon
scattering
Carrier concentration
Helium
Acoustics
Crystalline materials
Atoms
silicon
temperature effects
helium
gratings
dosage
acoustics
atoms
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Study of a new system for measuring semiconductor using laser stimulated scattering microscope. / Tanaka, T.; Harata, Akira; Sawada, T.

In: Journal De Physique, Vol. 4, No. 7, 07.1994.

Research output: Contribution to journalArticle

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