In organic thin-film transistors (OTFT), the fabrication processes such as surface treatment method, substrate temperature and deposition rate give significant effects on TFT device performance. We have investigated the variation of electrical performance on DNTT-based OTFT devices influenced by the fabrication processes. The DNTT films deposited on HMDS-treated SiO2 substrates at the substrate temperature of 60 °C, resulting in high OTFT performance with mobility greater than 0.56 cm2/(V·s) and Ion/Ioff greater than of 106. In addition, the prominent decrease of contact resistance to almost a one-tenth or less is observed from influence of surface treatment process.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Surfaces, Coatings and Films
- Management, Monitoring, Policy and Law