Study of low resistance TSV using electroless plated copper and tungsten-alloy barrier

F. Inoue, T. Yokoyama, S. Tanaka, K. Yamamoto, M. Koyanagi, T. Fukushima, Z. Wang, S. Shingubara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We studied a low temperature deposition of tungsten-alloy barrier and copper layers only by electroless plating, with an aim of realizing low resistance TSV with a high aspect ratio. We succeeded in successive deposition of W-Ni-P barrier layer and Cu on SiO 2. Furthermore, we found that the addition of Cl ions to SPS- and PEG- plating bath significantly improved the conformal deposition property even for a few μm in diameter TSVs with the aspect ratio higher than 10.

Original languageEnglish
Title of host publicationProceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009
Pages167-168
Number of pages2
DOIs
Publication statusPublished - Oct 1 2009
Externally publishedYes
Event2009 IEEE International Interconnect Technology Conference, IITC 2009 - Sapporo, Hokkaido, Japan
Duration: Jun 1 2009Jun 3 2009

Publication series

NameProceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009

Other

Other2009 IEEE International Interconnect Technology Conference, IITC 2009
CountryJapan
CitySapporo, Hokkaido
Period6/1/096/3/09

Fingerprint

Tungsten alloys
Copper alloys
Aspect ratio
Electroless plating
Plating
Polyethylene glycols
Copper
Ions
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Inoue, F., Yokoyama, T., Tanaka, S., Yamamoto, K., Koyanagi, M., Fukushima, T., ... Shingubara, S. (2009). Study of low resistance TSV using electroless plated copper and tungsten-alloy barrier. In Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009 (pp. 167-168). [5090376] (Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009). https://doi.org/10.1109/IITC.2009.5090376

Study of low resistance TSV using electroless plated copper and tungsten-alloy barrier. / Inoue, F.; Yokoyama, T.; Tanaka, S.; Yamamoto, K.; Koyanagi, M.; Fukushima, T.; Wang, Z.; Shingubara, S.

Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009. 2009. p. 167-168 5090376 (Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Inoue, F, Yokoyama, T, Tanaka, S, Yamamoto, K, Koyanagi, M, Fukushima, T, Wang, Z & Shingubara, S 2009, Study of low resistance TSV using electroless plated copper and tungsten-alloy barrier. in Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009., 5090376, Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009, pp. 167-168, 2009 IEEE International Interconnect Technology Conference, IITC 2009, Sapporo, Hokkaido, Japan, 6/1/09. https://doi.org/10.1109/IITC.2009.5090376
Inoue F, Yokoyama T, Tanaka S, Yamamoto K, Koyanagi M, Fukushima T et al. Study of low resistance TSV using electroless plated copper and tungsten-alloy barrier. In Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009. 2009. p. 167-168. 5090376. (Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009). https://doi.org/10.1109/IITC.2009.5090376
Inoue, F. ; Yokoyama, T. ; Tanaka, S. ; Yamamoto, K. ; Koyanagi, M. ; Fukushima, T. ; Wang, Z. ; Shingubara, S. / Study of low resistance TSV using electroless plated copper and tungsten-alloy barrier. Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009. 2009. pp. 167-168 (Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009).
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