The indium composition of the InGaN film increases with decreasing growth temperature; however, the crystalline quality of the film is poor when it is grown at low temperatures. To form a high-quality InGaN film with a large indium mole fraction, Nd: YAG pulse laser assisted metalorganic vapor phase epitaxy (MOVPE) was carried out at low temperatures. The results suggest that film quality can be improved by pulse laser irradiation on the surface of the film.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||8 A|
|Publication status||Published - Aug 1 2004|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)