Study of pulse laser assisted metalorganic vapor phase epitaxy of InGaN with large indium mole fraction

Yoshihiro Kangawa, Norihito Kawaguchi, Ken Nosuke Hida, Yoshinao Kumagai, Akinori Koukitu

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The indium composition of the InGaN film increases with decreasing growth temperature; however, the crystalline quality of the film is poor when it is grown at low temperatures. To form a high-quality InGaN film with a large indium mole fraction, Nd: YAG pulse laser assisted metalorganic vapor phase epitaxy (MOVPE) was carried out at low temperatures. The results suggest that film quality can be improved by pulse laser irradiation on the surface of the film.

Original languageEnglish
Pages (from-to)L1026-L1028
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number8 A
DOIs
Publication statusPublished - Aug 1 2004
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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