Study of SiO2 thickness effect on insertion loss of CMOS 60 GHz band pass filter

Nessim Mahmoud; Adel Barakat; Anwer S.Abd El-Hameed; Adel B. Abdel-Rahman; Ahmed Allam; Ramesh K. Pokharel

doi:10.1109/ICECS.2015.7440292

Study of SiO₂ thickness effect on insertion loss of CMOS 60 GHz band pass filter

Nessim Mahmoud, Adel Barakat, Anwer S.Abd El-Hameed, Adel B. Abdel-Rahman, Ahmed Allam, Ramesh K. Pokharel

Department of I&E Visionaries

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

This paper presents a study of the effect of the SiO₂ substrate thickness on the insertion loss performance of half wavelength open loop resonator bandpass filter. It has been observed that the main reason for insertion loss degradation is the small thickness of SiO₂. An insertion loss of -1.49dB is achieved with a SiO₂ thickness of 24μm. Furthermore, an equivalent lumped circuit model of the filter is proposed to verify this observation. The S-parameters of lumped element circuit model are obtained using the ADS simulator and compared with the results obtained from the EM simulator showing good agreement.

Original language	English
Title of host publication	2015 IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	237-239
Number of pages	3
ISBN (Electronic)	9781509002467
DOIs	https://doi.org/10.1109/ICECS.2015.7440292
Publication status	Published - Mar 23 2016
Event	IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015 - Cairo, Egypt Duration: Dec 6 2015 → Dec 9 2015

Publication series

Name	Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
Volume	2016-March

Other

Other	IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015
Country/Territory	Egypt
City	Cairo
Period	12/6/15 → 12/9/15

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/ICECS.2015.7440292

Cite this

Mahmoud, N., Barakat, A., El-Hameed, A. S. A., Abdel-Rahman, A. B., Allam, A., & Pokharel, R. K. (2016). Study of SiO₂ thickness effect on insertion loss of CMOS 60 GHz band pass filter. In 2015 IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015 (pp. 237-239). [7440292] (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems; Vol. 2016-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICECS.2015.7440292

Study of SiO₂ thickness effect on insertion loss of CMOS 60 GHz band pass filter. / Mahmoud, Nessim; Barakat, Adel; El-Hameed, Anwer S.Abd et al.

2015 IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015. Institute of Electrical and Electronics Engineers Inc., 2016. p. 237-239 7440292 (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems; Vol. 2016-March).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mahmoud, N, Barakat, A, El-Hameed, ASA, Abdel-Rahman, AB, Allam, A & Pokharel, RK 2016, Study of SiO₂ thickness effect on insertion loss of CMOS 60 GHz band pass filter. in 2015 IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015., 7440292, Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems, vol. 2016-March, Institute of Electrical and Electronics Engineers Inc., pp. 237-239, IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015, Cairo, Egypt, 12/6/15. https://doi.org/10.1109/ICECS.2015.7440292

Mahmoud N, Barakat A, El-Hameed ASA, Abdel-Rahman AB, Allam A, Pokharel RK. Study of SiO₂ thickness effect on insertion loss of CMOS 60 GHz band pass filter. In 2015 IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015. Institute of Electrical and Electronics Engineers Inc. 2016. p. 237-239. 7440292. (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems). doi: 10.1109/ICECS.2015.7440292

Mahmoud, Nessim ; Barakat, Adel ; El-Hameed, Anwer S.Abd et al. / Study of SiO₂ thickness effect on insertion loss of CMOS 60 GHz band pass filter. 2015 IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2015. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 237-239 (Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems).

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abstract = "This paper presents a study of the effect of the SiO2 substrate thickness on the insertion loss performance of half wavelength open loop resonator bandpass filter. It has been observed that the main reason for insertion loss degradation is the small thickness of SiO2. An insertion loss of -1.49dB is achieved with a SiO2 thickness of 24μm. Furthermore, an equivalent lumped circuit model of the filter is proposed to verify this observation. The S-parameters of lumped element circuit model are obtained using the ADS simulator and compared with the results obtained from the EM simulator showing good agreement.",

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AU - Allam, Ahmed

AU - Pokharel, Ramesh K.

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N2 - This paper presents a study of the effect of the SiO2 substrate thickness on the insertion loss performance of half wavelength open loop resonator bandpass filter. It has been observed that the main reason for insertion loss degradation is the small thickness of SiO2. An insertion loss of -1.49dB is achieved with a SiO2 thickness of 24μm. Furthermore, an equivalent lumped circuit model of the filter is proposed to verify this observation. The S-parameters of lumped element circuit model are obtained using the ADS simulator and compared with the results obtained from the EM simulator showing good agreement.

AB - This paper presents a study of the effect of the SiO2 substrate thickness on the insertion loss performance of half wavelength open loop resonator bandpass filter. It has been observed that the main reason for insertion loss degradation is the small thickness of SiO2. An insertion loss of -1.49dB is achieved with a SiO2 thickness of 24μm. Furthermore, an equivalent lumped circuit model of the filter is proposed to verify this observation. The S-parameters of lumped element circuit model are obtained using the ADS simulator and compared with the results obtained from the EM simulator showing good agreement.

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