Study of the effect of doped impurities on polytype stability during PVT growth of SiC using 2D nucleation theory

T. Shiramomo, B. Gao, F. Mercier, S. Nishizawa, S. Nakano, K. Kakimoto

Research output: Contribution to journalArticle

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Abstract

The effect of nitrogen and aluminum as doped impurities on the stability of SiC polytypes (C- or Si-face 4H and 6H substrates) formed by physical vapor transport (PVT) was investigated. The stability of the polytypes was analyzed using classical thermodynamic nucleation theory with numerical results obtained from a global model including heat, mass and species transfer in a PVT furnace. The results reveal that the formation of 4H-SiC was more stable than that of 6H-SiC when a grown crystal was doped with nitrogen using C-face 4H- and 6H-SiC as seed crystals. In contrast, formation of 6H-SiC was favored over 4H-SiC when Si-face 4H- and 6H-SiC seed crystals were used. Meanwhile, the formation of 4H-SiC was more stable than that of 6H-SiC when aluminum was the dopant and C- and Si-faces of 6H-SiC were used as seed crystals. Formation of 6H-SiC occurred over that of 4H-SiC in the cases of C- and Si-faces of 4H-SiC as seed crystals.

Original languageEnglish
Pages (from-to)95-99
Number of pages5
JournalJournal of Crystal Growth
Volume385
DOIs
Publication statusPublished - Jan 1 2014

Fingerprint

seeds
Nucleation
Vapors
nucleation
Impurities
vapors
impurities
Crystals
crystals
Aluminum
aluminum
nitrogen
Nitrogen
doped crystals
mass transfer
furnaces
heat transfer
Furnaces
thermodynamics
Doping (additives)

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Study of the effect of doped impurities on polytype stability during PVT growth of SiC using 2D nucleation theory. / Shiramomo, T.; Gao, B.; Mercier, F.; Nishizawa, S.; Nakano, S.; Kakimoto, K.

In: Journal of Crystal Growth, Vol. 385, 01.01.2014, p. 95-99.

Research output: Contribution to journalArticle

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AU - Shiramomo, T.

AU - Gao, B.

AU - Mercier, F.

AU - Nishizawa, S.

AU - Nakano, S.

AU - Kakimoto, K.

PY - 2014/1/1

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N2 - The effect of nitrogen and aluminum as doped impurities on the stability of SiC polytypes (C- or Si-face 4H and 6H substrates) formed by physical vapor transport (PVT) was investigated. The stability of the polytypes was analyzed using classical thermodynamic nucleation theory with numerical results obtained from a global model including heat, mass and species transfer in a PVT furnace. The results reveal that the formation of 4H-SiC was more stable than that of 6H-SiC when a grown crystal was doped with nitrogen using C-face 4H- and 6H-SiC as seed crystals. In contrast, formation of 6H-SiC was favored over 4H-SiC when Si-face 4H- and 6H-SiC seed crystals were used. Meanwhile, the formation of 4H-SiC was more stable than that of 6H-SiC when aluminum was the dopant and C- and Si-faces of 6H-SiC were used as seed crystals. Formation of 6H-SiC occurred over that of 4H-SiC in the cases of C- and Si-faces of 4H-SiC as seed crystals.

AB - The effect of nitrogen and aluminum as doped impurities on the stability of SiC polytypes (C- or Si-face 4H and 6H substrates) formed by physical vapor transport (PVT) was investigated. The stability of the polytypes was analyzed using classical thermodynamic nucleation theory with numerical results obtained from a global model including heat, mass and species transfer in a PVT furnace. The results reveal that the formation of 4H-SiC was more stable than that of 6H-SiC when a grown crystal was doped with nitrogen using C-face 4H- and 6H-SiC as seed crystals. In contrast, formation of 6H-SiC was favored over 4H-SiC when Si-face 4H- and 6H-SiC seed crystals were used. Meanwhile, the formation of 4H-SiC was more stable than that of 6H-SiC when aluminum was the dopant and C- and Si-faces of 6H-SiC were used as seed crystals. Formation of 6H-SiC occurred over that of 4H-SiC in the cases of C- and Si-faces of 4H-SiC as seed crystals.

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