Study of the effects of discharge conditions and substrate temperature on Si epitaxial deposition using sputtering-type electron cyclotron resonance plasma

Junsi Gao, Junli Wang, Naofumi Sakai, Kanako Iwanaga, Katsunori Muraoka, Hiroshi Nakashima, Dawei Gao, Katsuhiko Furukawa

    Research output: Contribution to journalArticle

    5 Citations (Scopus)

    Abstract

    A homogeneous Si epitaxial film was developed for the first time at the conventional base vacuum of 5×10-7 Torr and low substrate temperature of 400 °C. The key issue in achieving this was to use a high flux of Si atoms supplied by a sputtering-type electron cyclotron resonance (ECR) plasma. In addition, the use of uniform plasma having high flux and low energy was also very important in this novel method.

    Original languageEnglish
    Pages (from-to)873-878
    Number of pages6
    JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    Volume18
    Issue number3
    DOIs
    Publication statusPublished - May 2000

    All Science Journal Classification (ASJC) codes

    • Condensed Matter Physics
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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