Study of theoretical J-V equation for 3-layer OLED device

Sang Gun Lee, Reiji Hattori

    Research output: Contribution to journalArticle

    Abstract

    The theoretical equations for J-V characteristics in a 3-layer organic light emitting diode (OLED) were derived according to the internal carrier emission equation based on a diffusion model at Schottky barrier contact and the mobility equation based on the Pool-Frenkel model. The validity of these equations was confirmed by comparing with the results from the device simulation where the same parameters were employed. The device structure for 3-layer OLED is consisted of electron transport layer (ETL) / hole transport layer (HTL) /hole injection layer (HIL). When obeys hole inter-layer barrier limited, the gradient of sub-threshold region was slowing down due to high hole barrier height for HTL and low hole mobility for HIL . And the SPICE model described by Verilog-A language was created based on the theoretical J-V characteristic equations. And also, we were confirmed that the J-V characteristics of device simulation and Verilog-A model are identical to each other.

    Original languageEnglish
    Pages (from-to)43-46
    Number of pages4
    JournalResearch Reports on Information Science and Electrical Engineering of Kyushu University
    Volume15
    Issue number1
    Publication statusPublished - Mar 2010

    Fingerprint

    Organic light emitting diodes (OLED)
    Computer hardware description languages
    Hole mobility
    SPICE

    All Science Journal Classification (ASJC) codes

    • Electrical and Electronic Engineering
    • Computer Science(all)

    Cite this

    Study of theoretical J-V equation for 3-layer OLED device. / Lee, Sang Gun; Hattori, Reiji.

    In: Research Reports on Information Science and Electrical Engineering of Kyushu University, Vol. 15, No. 1, 03.2010, p. 43-46.

    Research output: Contribution to journalArticle

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    abstract = "The theoretical equations for J-V characteristics in a 3-layer organic light emitting diode (OLED) were derived according to the internal carrier emission equation based on a diffusion model at Schottky barrier contact and the mobility equation based on the Pool-Frenkel model. The validity of these equations was confirmed by comparing with the results from the device simulation where the same parameters were employed. The device structure for 3-layer OLED is consisted of electron transport layer (ETL) / hole transport layer (HTL) /hole injection layer (HIL). When obeys hole inter-layer barrier limited, the gradient of sub-threshold region was slowing down due to high hole barrier height for HTL and low hole mobility for HIL . And the SPICE model described by Verilog-A language was created based on the theoretical J-V characteristic equations. And also, we were confirmed that the J-V characteristics of device simulation and Verilog-A model are identical to each other.",
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