Study on damages in ion-implanted Si using transient reflecting gratings

Hiroyuki Nishimura, Akira Harata, Tsuguo Sawada

Research output: Contribution to journalArticlepeer-review

Abstract

The transient reflecting grating method has been used to characterize ion-implanted silicon layers. The signal intensity and relaxation constant were measured as functions of ion dose. The results suggested that damage induced by ion-implantation suppresses thermal diffusion even under a light dose condition.

Original languageEnglish
Pages (from-to)1235-1236
Number of pages2
Journalanalytical sciences
Volume7
DOIs
Publication statusPublished - Jan 1991
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Analytical Chemistry

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