Study on energy level bending at heterojunction of solution-processed phthalocyanine thin film and n-Si by Kelvin probe force microscopy

Ryo Ishiura, Akihiko Fujii, Makoto Arita, Koichi Sudoh, Masanori Ozaki

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Surface potential of a solution-processed thin film of an organic semiconductor, 1,4,8,11,15,18,22,25-octahexylphthalocyanine (C6PcH2), on n-type silicon (n-Si) substrate has been studied by using Kelvin probe force microscopy, and discussed the interface properties of organic/inorganic semiconductors. The molecular step and terrace structure was observed on the surface of solution-processed C6PcH2 thin film as a feature of the crystallites composed of C6PcH2 columns lying on the substrate. The surface potential changed depending on the distance from the interface, and exceeded 0.4 eV, which indicated the difference of Fermi levels between C6PcH2 and n-Si. The linear and non-linear relationships between the surface potential and the distance from the interface were discussed by taking the vacuum level shift and impurity carriers into consideration.

    Original languageEnglish
    Article number105599
    JournalOrganic Electronics
    Volume78
    DOIs
    Publication statusPublished - Mar 2020

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Biomaterials
    • Chemistry(all)
    • Condensed Matter Physics
    • Materials Chemistry
    • Electrical and Electronic Engineering

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