TY - JOUR
T1 - Study on growth processes of particles in germane radio frequency discharges using laser light scattering and scanning electron microscopic methods
AU - Kawasaki, Hiroharu
AU - Kida, Junichirou
AU - Sakamoto, Kazutaka
AU - Fukuzawa, Tsuyoshi
AU - Shiratani, Masaharu
AU - Watanabe, Yukio
PY - 1998/6/1
Y1 - 1998/6/1
N2 - Growth processes of particles formed in germane (GeH4) rf parallel plate discharges are studied using a laser light scattering and scanning electron microscopic methods. For GeH4(5%)+He, 30 sccm, 80 Pa, and a relatively high power of 40 W(0.51 W/cm2), particles begin to be observed from a very early time of about 0.13 s after the discharge initiation around the plasma/sheath boundary near the powered electrode, where emission intensity of Ge atoms is high. This appearance time of particles is extremely early compared to that (about 0.5 s) in silane (SiH4) rf discharges. The localized existence of particles suggests that short-lifetime radicals being generated at a high rate may contribute to the particle nucleation, while little information about reaction rates for GeHx (x =0 - 3) radicals is available. After nucleation and subsequent initial growth of particles, they coagulate quickly with one another, which brings about a growth rate considerably high compared to that for SiH4. Some Ge particles become submicron in size at an early time of 0.3 s and fall to the plasma/sheath boundary near the lower grounded electrode. For such a high coagulation rate (growth rate is about 800 nm/s), particles have irregular nonspherical shapes and most of them are agglomerates composed of chains, while they are almost spherical with a roughness of primary particle size (about 10 nm) for a low coagulation rate (growth rate is about 100 nm/s). Fast appearance of particles for GeH4 discharges also brings about rapid decrease in discharge voltage and absolute value of self-bias voltage.
AB - Growth processes of particles formed in germane (GeH4) rf parallel plate discharges are studied using a laser light scattering and scanning electron microscopic methods. For GeH4(5%)+He, 30 sccm, 80 Pa, and a relatively high power of 40 W(0.51 W/cm2), particles begin to be observed from a very early time of about 0.13 s after the discharge initiation around the plasma/sheath boundary near the powered electrode, where emission intensity of Ge atoms is high. This appearance time of particles is extremely early compared to that (about 0.5 s) in silane (SiH4) rf discharges. The localized existence of particles suggests that short-lifetime radicals being generated at a high rate may contribute to the particle nucleation, while little information about reaction rates for GeHx (x =0 - 3) radicals is available. After nucleation and subsequent initial growth of particles, they coagulate quickly with one another, which brings about a growth rate considerably high compared to that for SiH4. Some Ge particles become submicron in size at an early time of 0.3 s and fall to the plasma/sheath boundary near the lower grounded electrode. For such a high coagulation rate (growth rate is about 800 nm/s), particles have irregular nonspherical shapes and most of them are agglomerates composed of chains, while they are almost spherical with a roughness of primary particle size (about 10 nm) for a low coagulation rate (growth rate is about 100 nm/s). Fast appearance of particles for GeH4 discharges also brings about rapid decrease in discharge voltage and absolute value of self-bias voltage.
UR - http://www.scopus.com/inward/record.url?scp=0009055899&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0009055899&partnerID=8YFLogxK
U2 - 10.1063/1.367420
DO - 10.1063/1.367420
M3 - Article
AN - SCOPUS:0009055899
SN - 0021-8979
VL - 83
SP - 5665
EP - 5669
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 11
ER -