Study on reduction of micro-scratch in oxide CMP for multi-level interconnection - Investigation of mechanism for micro-scratch formation in CMP process

Yohei Yamada, Takahiro Sugaya, Nobuhiro Konishi, Syuhei Kurokawa, Toshiro Doi

Research output: Contribution to journalArticle

Abstract

Chemical-mechanical polishing (CMP) has been widely accepted for the planarization of multi-layer structures in semiconductor manufacturing. Micro-scratch is the typical defect made during the CMP process, which are produced mainly because of agglomeration of slurry. Defects like micro-scratch lead to severe circuit failure, and affects yield. In this study, we described approaches to a production-worthy CMP process to prevent impact of micro-scratches on product wafer and lead to yield improvement. We have studied the effects of slurry filtration, pad cut rate of pad conditioner disks, and pad grooving design of the hard pads. By optimizing the consumables and polishing conditions, the hard pad-pad process showed 80% improvement in defectivity compared to the stack-type pad process.

Original languageEnglish
Pages (from-to)1303-1307
Number of pages5
JournalSeimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering
Volume74
Issue number12
DOIs
Publication statusPublished - Jan 1 2008
Externally publishedYes

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Chemical mechanical polishing
Oxides
Defects
Polishing
Agglomeration
Semiconductor materials
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering

Cite this

Study on reduction of micro-scratch in oxide CMP for multi-level interconnection - Investigation of mechanism for micro-scratch formation in CMP process. / Yamada, Yohei; Sugaya, Takahiro; Konishi, Nobuhiro; Kurokawa, Syuhei; Doi, Toshiro.

In: Seimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering, Vol. 74, No. 12, 01.01.2008, p. 1303-1307.

Research output: Contribution to journalArticle

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