TY - JOUR
T1 - Study on the response and recovery properties of semiconductor gas sensors using a high-speed gas-switching system
AU - Kida, Tetsuya
AU - Kuroiwa, Toru
AU - Yuasa, Masayoshi
AU - Shimanoe, Kengo
AU - Yamazoe, Noboru
N1 - Funding Information:
This work was financially supported in part by a Grant-in-Aid for Scientific Research (B) (No. 18350075) from the Ministry of Education, Science, Sports and Culture of Japan.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2008/9/25
Y1 - 2008/9/25
N2 - A high-speed gas-switching system, in which a low-dead volume chamber (0.6 cm3) was connected to a gas flow apparatus equipped with a high-speed gas-switching valve operative at a rate of 30 ms, was designed to investigate the real response and recovery properties of semiconductor gas sensors. The developed system allowed rapid replacement of the gas atmosphere in the chamber where a gas sensor device was placed within 0.3 s. It was revealed that the response speed of the sensor device based on a SnO2 porous film (pore size at maximum population: 37 nm) was remarkably fast, reaching a response time of less than 1 s for H2 and CO detection at 250 and 350 °C. This suggests that the diffusion and surface reaction of H2 and CO are quite fast in the porous film. On the other hand, the recovery speed was not comparably fast and the resistance of the device did not recover to the original state within 20 s after switching the gas atmosphere in the chamber from the sample gases to air. This is possibly due to the slow desorption of the H2O and CO2 that were formed by the surface reaction of H2 and CO, respectively with the adsorbed oxygen on SnO2.
AB - A high-speed gas-switching system, in which a low-dead volume chamber (0.6 cm3) was connected to a gas flow apparatus equipped with a high-speed gas-switching valve operative at a rate of 30 ms, was designed to investigate the real response and recovery properties of semiconductor gas sensors. The developed system allowed rapid replacement of the gas atmosphere in the chamber where a gas sensor device was placed within 0.3 s. It was revealed that the response speed of the sensor device based on a SnO2 porous film (pore size at maximum population: 37 nm) was remarkably fast, reaching a response time of less than 1 s for H2 and CO detection at 250 and 350 °C. This suggests that the diffusion and surface reaction of H2 and CO are quite fast in the porous film. On the other hand, the recovery speed was not comparably fast and the resistance of the device did not recover to the original state within 20 s after switching the gas atmosphere in the chamber from the sample gases to air. This is possibly due to the slow desorption of the H2O and CO2 that were formed by the surface reaction of H2 and CO, respectively with the adsorbed oxygen on SnO2.
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U2 - 10.1016/j.snb.2008.06.044
DO - 10.1016/j.snb.2008.06.044
M3 - Article
AN - SCOPUS:51649126606
VL - 134
SP - 928
EP - 933
JO - Sensors and Actuators, B: Chemical
JF - Sensors and Actuators, B: Chemical
SN - 0925-4005
IS - 2
ER -