Study on the response and recovery properties of semiconductor gas sensors using a high-speed gas-switching system

Tetsuya Kida; Toru Kuroiwa; Masayoshi Yuasa; Kengo Shimanoe; Noboru Yamazoe

doi:10.1016/j.snb.2008.06.044

Study on the response and recovery properties of semiconductor gas sensors using a high-speed gas-switching system

Tetsuya Kida, Toru Kuroiwa, Masayoshi Yuasa, Kengo Shimanoe, Noboru Yamazoe

Functional Materials Science

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

A high-speed gas-switching system, in which a low-dead volume chamber (0.6 cm³) was connected to a gas flow apparatus equipped with a high-speed gas-switching valve operative at a rate of 30 ms, was designed to investigate the real response and recovery properties of semiconductor gas sensors. The developed system allowed rapid replacement of the gas atmosphere in the chamber where a gas sensor device was placed within 0.3 s. It was revealed that the response speed of the sensor device based on a SnO₂ porous film (pore size at maximum population: 37 nm) was remarkably fast, reaching a response time of less than 1 s for H₂ and CO detection at 250 and 350 °C. This suggests that the diffusion and surface reaction of H₂ and CO are quite fast in the porous film. On the other hand, the recovery speed was not comparably fast and the resistance of the device did not recover to the original state within 20 s after switching the gas atmosphere in the chamber from the sample gases to air. This is possibly due to the slow desorption of the H₂O and CO₂ that were formed by the surface reaction of H₂ and CO, respectively with the adsorbed oxygen on SnO₂.

Original language	English
Pages (from-to)	928-933
Number of pages	6
Journal	Sensors and Actuators, B: Chemical
Volume	134
Issue number	2
DOIs	https://doi.org/10.1016/j.snb.2008.06.044
Publication status	Published - Sept 25 2008

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.snb.2008.06.044

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title = "Study on the response and recovery properties of semiconductor gas sensors using a high-speed gas-switching system",

abstract = "A high-speed gas-switching system, in which a low-dead volume chamber (0.6 cm3) was connected to a gas flow apparatus equipped with a high-speed gas-switching valve operative at a rate of 30 ms, was designed to investigate the real response and recovery properties of semiconductor gas sensors. The developed system allowed rapid replacement of the gas atmosphere in the chamber where a gas sensor device was placed within 0.3 s. It was revealed that the response speed of the sensor device based on a SnO2 porous film (pore size at maximum population: 37 nm) was remarkably fast, reaching a response time of less than 1 s for H2 and CO detection at 250 and 350 °C. This suggests that the diffusion and surface reaction of H2 and CO are quite fast in the porous film. On the other hand, the recovery speed was not comparably fast and the resistance of the device did not recover to the original state within 20 s after switching the gas atmosphere in the chamber from the sample gases to air. This is possibly due to the slow desorption of the H2O and CO2 that were formed by the surface reaction of H2 and CO, respectively with the adsorbed oxygen on SnO2.",

author = "Tetsuya Kida and Toru Kuroiwa and Masayoshi Yuasa and Kengo Shimanoe and Noboru Yamazoe",

note = "Funding Information: This work was financially supported in part by a Grant-in-Aid for Scientific Research (B) (No. 18350075) from the Ministry of Education, Science, Sports and Culture of Japan. ",

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AU - Kida, Tetsuya

AU - Kuroiwa, Toru

AU - Yuasa, Masayoshi

AU - Shimanoe, Kengo

AU - Yamazoe, Noboru

N1 - Funding Information: This work was financially supported in part by a Grant-in-Aid for Scientific Research (B) (No. 18350075) from the Ministry of Education, Science, Sports and Culture of Japan.

PY - 2008/9/25

Y1 - 2008/9/25

N2 - A high-speed gas-switching system, in which a low-dead volume chamber (0.6 cm3) was connected to a gas flow apparatus equipped with a high-speed gas-switching valve operative at a rate of 30 ms, was designed to investigate the real response and recovery properties of semiconductor gas sensors. The developed system allowed rapid replacement of the gas atmosphere in the chamber where a gas sensor device was placed within 0.3 s. It was revealed that the response speed of the sensor device based on a SnO2 porous film (pore size at maximum population: 37 nm) was remarkably fast, reaching a response time of less than 1 s for H2 and CO detection at 250 and 350 °C. This suggests that the diffusion and surface reaction of H2 and CO are quite fast in the porous film. On the other hand, the recovery speed was not comparably fast and the resistance of the device did not recover to the original state within 20 s after switching the gas atmosphere in the chamber from the sample gases to air. This is possibly due to the slow desorption of the H2O and CO2 that were formed by the surface reaction of H2 and CO, respectively with the adsorbed oxygen on SnO2.

AB - A high-speed gas-switching system, in which a low-dead volume chamber (0.6 cm3) was connected to a gas flow apparatus equipped with a high-speed gas-switching valve operative at a rate of 30 ms, was designed to investigate the real response and recovery properties of semiconductor gas sensors. The developed system allowed rapid replacement of the gas atmosphere in the chamber where a gas sensor device was placed within 0.3 s. It was revealed that the response speed of the sensor device based on a SnO2 porous film (pore size at maximum population: 37 nm) was remarkably fast, reaching a response time of less than 1 s for H2 and CO detection at 250 and 350 °C. This suggests that the diffusion and surface reaction of H2 and CO are quite fast in the porous film. On the other hand, the recovery speed was not comparably fast and the resistance of the device did not recover to the original state within 20 s after switching the gas atmosphere in the chamber from the sample gases to air. This is possibly due to the slow desorption of the H2O and CO2 that were formed by the surface reaction of H2 and CO, respectively with the adsorbed oxygen on SnO2.

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Study on the response and recovery properties of semiconductor gas sensors using a high-speed gas-switching system

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