Study on thermal stress in a silicon ingot during a unidirectional solidification process

X. J. Chen, S. Nakano, L. J. Liu, Koichi Kakimoto

Research output: Contribution to journalArticle

64 Citations (Scopus)

Abstract

A transient global model was used to obtain the solution of a thermal field within the entire furnace during a unidirectional solidification process for photovoltaics. The melt-solid interface shape was obtained by a dynamic interface tracking method. The thermal stress distribution in the silicon ingot was solved using the displacement-based thermo-elastic stress model. Furthermore, several different melt-solid interface shapes were obtained by using different growth velocities, and then the thermal stresses for different solidification times were compared. The simulation results suggested that the crucible constraint should be reduced and a longer solidification time should be used for growing a silicon ingot with low thermal stress and low dislocation density.

Original languageEnglish
Pages (from-to)4330-4335
Number of pages6
JournalJournal of Crystal Growth
Volume310
Issue number19
DOIs
Publication statusPublished - Sep 15 2008

Fingerprint

ingots
Silicon
Ingots
thermal stresses
Thermal stress
solidification
Solidification
silicon
Crucibles
crucibles
stress distribution
furnaces
Stress concentration
Furnaces
simulation

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Study on thermal stress in a silicon ingot during a unidirectional solidification process. / Chen, X. J.; Nakano, S.; Liu, L. J.; Kakimoto, Koichi.

In: Journal of Crystal Growth, Vol. 310, No. 19, 15.09.2008, p. 4330-4335.

Research output: Contribution to journalArticle

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