Sub-kT/q switching in In2O3 nanowire negative capacitance field-effect transistors

Meng Su, Xuming Zou, Youning Gong, Jianlu Wang, Yuan Liu, Johnny C. Ho, Xingqiang Liu, Lei Liao

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Limited by the Boltzmann distribution of electrons, the sub-threshold swing (SS) of conventional MOSFETs cannot be less than 60 mV dec-1. This limitation hinders the reduction of power dissipation of the devices. Herein, we present high-performance In2O3 nanowire (NW) negative capacitance field-effect transistors (NC-FETs) by introducing a ferroelectric P(VDF-TrFE) layer in a gate dielectric stack. The fabricated devices exhibit excellent gate modulation with a high saturation current density of 550 μA μm-1 and an outstanding SS value less than 60 mV dec-1 for over 4 decades of channel current. The assembled inverter circuit can demonstrate an impressive voltage gain of 25 and a cut-off frequency of over 10 MHz. By utilizing the self-aligned fabrication scheme, the device can be ultimately scaled down to below 100 nm channel length. The devices with 200 nm channel length exhibit the best performances, in which a high on/off current ratio of >107, a large output current density of 960 μA μm-1 and a small SS value of 42 mV dec-1 are obtained at the same time. All these would not only evidently demonstrate the potency of NW NC-FETs to break through the Boltzmann limit in nanoelectronics, but also open up a new avenue to low-power transistors for portable products.

Original languageEnglish
Pages (from-to)19131-19139
Number of pages9
JournalNanoscale
Volume10
Issue number40
DOIs
Publication statusPublished - Oct 28 2018
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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