Sub-microscopic transient lens spectroscopy of InGaN/GaN quantum wells

Koichi Okamoto, Shigeo Fujita, Yoichi Kawakami, Axel Scherer

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Transient lens (TL) spectroscopy was developed with sub-micrometer spatial resolution to observe the temporal and special behavior of the nonradiative processes of carrier dynamics in InGaN/GaN quantum wells (QW). We have observed the carrier density dynamics and the thermal dynamics in the TL signals with a nanosecond pulsed laser. We have also observed TL and photoluminescence (PL) signals by using near-field scanning optical microscopy (NSOM), and find that both PL and TL images are correlated and exhibit submicron scale spatial inhomogeneity.

Original languageEnglish
Pages (from-to)368-371
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume240
Issue number2
DOIs
Publication statusPublished - Nov 1 2003

Fingerprint

Semiconductor quantum wells
Lenses
lenses
quantum wells
Spectroscopy
spectroscopy
Photoluminescence
Near field scanning optical microscopy
photoluminescence
Pulsed lasers
Carrier concentration
micrometers
pulsed lasers
near fields
inhomogeneity
spatial resolution
microscopy
scanning

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Sub-microscopic transient lens spectroscopy of InGaN/GaN quantum wells. / Okamoto, Koichi; Fujita, Shigeo; Kawakami, Yoichi; Scherer, Axel.

In: Physica Status Solidi (B) Basic Research, Vol. 240, No. 2, 01.11.2003, p. 368-371.

Research output: Contribution to journalArticle

Okamoto, Koichi ; Fujita, Shigeo ; Kawakami, Yoichi ; Scherer, Axel. / Sub-microscopic transient lens spectroscopy of InGaN/GaN quantum wells. In: Physica Status Solidi (B) Basic Research. 2003 ; Vol. 240, No. 2. pp. 368-371.
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