Sub-microscopic transient lens spectroscopy of InGaN/GaN quantum wells

Koichi Okamoto, Shigeo Fujita, Yoichi Kawakami, Axel Scherer

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Transient lens (TL) spectroscopy was developed with sub-micrometer spatial resolution to observe the temporal and special behavior of the nonradiative processes of carrier dynamics in InGaN/GaN quantum wells (QW). We have observed the carrier density dynamics and the thermal dynamics in the TL signals with a nanosecond pulsed laser. We have also observed TL and photoluminescence (PL) signals by using near-field scanning optical microscopy (NSOM), and find that both PL and TL images are correlated and exhibit submicron scale spatial inhomogeneity.

Original languageEnglish
Pages (from-to)368-371
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume240
Issue number2
DOIs
Publication statusPublished - Nov 1 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Sub-microscopic transient lens spectroscopy of InGaN/GaN quantum wells'. Together they form a unique fingerprint.

Cite this