Sub-nm EOT ferroelectric HfO2 on p+Ge with highly reliable field cycling properties

X. Tian, L. Xu, S. Shibayama, T. Nishimura, T. Yajima, S. Migita, A. Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

5-nm-Thick ferroelectric Y-doped HfO2 was intensively studied. The thickness dependence of ferroelectric properties indicates that stable ferroelectric characteristics are maintained down to 5-nm-thick by taking care of doping and capping effects. Furthermore, the cycling performance shows no wake-up behavior, no obvious degradation after 108 cycles. These results not only enable us to use ferroelectric HfO2 for practical application, but also point out intrinsic properties in ultrathin ferroelectric HfO2 film from materials science point of view.

Original languageEnglish
Title of host publication2017 IEEE International Electron Devices Meeting, IEDM 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages37.1.1-37.1.4
ISBN (Electronic)9781538635599
DOIs
Publication statusPublished - Jan 23 2018
Externally publishedYes
Event63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States
Duration: Dec 2 2017Dec 6 2017

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other63rd IEEE International Electron Devices Meeting, IEDM 2017
Country/TerritoryUnited States
CitySan Francisco
Period12/2/1712/6/17

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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