Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy

Koichi Okamoto, Jungkwon Choi, Yoichi Kawakami, Masahide Terazima, Takashi Mukai, Shigeo Fujita

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Confocal scanning laser microscopy was used for the first time to obtain the submicron-scale photoluminescence (PL) of InGaN/GaN single quantum wells (SQWs). We found island-shaped spatial inhomogeneities of both PL intensities and spectra as small as 100-200 nm. The spatial resolution of the obtained PL images was much smaller than the diffusion length of carriers in active layers at room temperature.

Original languageEnglish
Pages (from-to)839-840
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number2
DOIs
Publication statusPublished - Jan 1 2004
Externally publishedYes

Fingerprint

laser microscopy
Photoluminescence
Microscopic examination
Scanning
photoluminescence
scanning
Lasers
diffusion length
Semiconductor quantum wells
inhomogeneity
spatial resolution
quantum wells
room temperature
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy. / Okamoto, Koichi; Choi, Jungkwon; Kawakami, Yoichi; Terazima, Masahide; Mukai, Takashi; Fujita, Shigeo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 2, 01.01.2004, p. 839-840.

Research output: Contribution to journalArticle

Okamoto, Koichi ; Choi, Jungkwon ; Kawakami, Yoichi ; Terazima, Masahide ; Mukai, Takashi ; Fujita, Shigeo. / Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2004 ; Vol. 43, No. 2. pp. 839-840.
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