Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy

Koichi Okamoto; Jungkwon Choi; Yoichi Kawakami; Masahide Terazima; Takashi Mukai; Shigeo Fujita

doi:10.1143/JJAP.43.839

Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy

Koichi Okamoto, Jungkwon Choi, Yoichi Kawakami, Masahide Terazima, Takashi Mukai, Shigeo Fujita

Department of Fundamental Organic Chemistry

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Confocal scanning laser microscopy was used for the first time to obtain the submicron-scale photoluminescence (PL) of InGaN/GaN single quantum wells (SQWs). We found island-shaped spatial inhomogeneities of both PL intensities and spectra as small as 100-200 nm. The spatial resolution of the obtained PL images was much smaller than the diffusion length of carriers in active layers at room temperature.

Original language	English
Pages (from-to)	839-840
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	43
Issue number	2
DOIs	https://doi.org/10.1143/JJAP.43.839
Publication status	Published - Feb 2004

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy. / Okamoto, Koichi; Choi, Jungkwon; Kawakami, Yoichi; Terazima, Masahide; Mukai, Takashi; Fujita, Shigeo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 2, 02.2004, p. 839-840.

Research output: Contribution to journal › Article › peer-review

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Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy

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