Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy

Koichi Okamoto; Jungkwon Choi; Yoichi Kawakami; Masahide Terazima; Takashi Mukai; Shigeo Fujita

doi:10.1143/JJAP.43.839

Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy

Koichi Okamoto, Jungkwon Choi, Yoichi Kawakami, Masahide Terazima, Takashi Mukai, Shigeo Fujita

Department of Fundamental Organic Chemistry

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Confocal scanning laser microscopy was used for the first time to obtain the submicron-scale photoluminescence (PL) of InGaN/GaN single quantum wells (SQWs). We found island-shaped spatial inhomogeneities of both PL intensities and spectra as small as 100-200 nm. The spatial resolution of the obtained PL images was much smaller than the diffusion length of carriers in active layers at room temperature.

Original language	English
Pages (from-to)	839-840
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	43
Issue number	2
DOIs	https://doi.org/10.1143/JJAP.43.839
Publication status	Published - Feb 2004

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.43.839

Fingerprint Dive into the research topics of 'Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy'. Together they form a unique fingerprint.

Cite this

Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy. / Okamoto, Koichi; Choi, Jungkwon; Kawakami, Yoichi; Terazima, Masahide; Mukai, Takashi; Fujita, Shigeo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 2, 02.2004, p. 839-840.

Research output: Contribution to journal › Article › peer-review

@article{269a9ca5e915498a96ebe43a59b1d1af,

title = "Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy",

abstract = "Confocal scanning laser microscopy was used for the first time to obtain the submicron-scale photoluminescence (PL) of InGaN/GaN single quantum wells (SQWs). We found island-shaped spatial inhomogeneities of both PL intensities and spectra as small as 100-200 nm. The spatial resolution of the obtained PL images was much smaller than the diffusion length of carriers in active layers at room temperature.",

author = "Koichi Okamoto and Jungkwon Choi and Yoichi Kawakami and Masahide Terazima and Takashi Mukai and Shigeo Fujita",

year = "2004",

month = feb,

doi = "10.1143/JJAP.43.839",

language = "English",

volume = "43",

pages = "839--840",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy

AU - Okamoto, Koichi

AU - Choi, Jungkwon

AU - Kawakami, Yoichi

AU - Terazima, Masahide

AU - Mukai, Takashi

AU - Fujita, Shigeo

PY - 2004/2

Y1 - 2004/2

N2 - Confocal scanning laser microscopy was used for the first time to obtain the submicron-scale photoluminescence (PL) of InGaN/GaN single quantum wells (SQWs). We found island-shaped spatial inhomogeneities of both PL intensities and spectra as small as 100-200 nm. The spatial resolution of the obtained PL images was much smaller than the diffusion length of carriers in active layers at room temperature.

AB - Confocal scanning laser microscopy was used for the first time to obtain the submicron-scale photoluminescence (PL) of InGaN/GaN single quantum wells (SQWs). We found island-shaped spatial inhomogeneities of both PL intensities and spectra as small as 100-200 nm. The spatial resolution of the obtained PL images was much smaller than the diffusion length of carriers in active layers at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=2142708738&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2142708738&partnerID=8YFLogxK

U2 - 10.1143/JJAP.43.839

DO - 10.1143/JJAP.43.839

M3 - Article

AN - SCOPUS:2142708738

VL - 43

SP - 839

EP - 840

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 2

ER -