Abstract
Confocal scanning laser microscopy was used for the first time to obtain the submicron-scale photoluminescence (PL) of InGaN/GaN single quantum wells (SQWs). We found island-shaped spatial inhomogeneities of both PL intensities and spectra as small as 100-200 nm. The spatial resolution of the obtained PL images was much smaller than the diffusion length of carriers in active layers at room temperature.
Original language | English |
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Pages (from-to) | 839-840 |
Number of pages | 2 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 43 |
Issue number | 2 |
DOIs | |
Publication status | Published - Feb 2004 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)