Subpicosecond surface-restricted carrier and thermal dynamics by transient reflectivity measurements

Takayuki Tanaka, Akira Harata, Tsuguo Sawada

    Research output: Contribution to journalArticle

    65 Citations (Scopus)

    Abstract

    Ultrafast measurements of photoexcited carrier dynamics within a 60 nm subsurface of a crystalline silicon wafer were carried out using subpicosecond transient reflectivity. A uv pump light was employed to restrict carrier generation to occur within the subsurface by direct interband transitions. Carrier diffusion was found to be suppressed in the subsurface region of the intrinsic silicon wafer. For ion-implanted silicon wafers, heat was generated within a few picoseconds after the laser irradiation. By scanning a partially ion-implanted silicon wafer, the two-dimensional image was obtained, which showed that time-resolved imaging can separately map photoexcited carrier density and transient temperature rise. The possibility of three-dimensional process monitoring was considered as well.

    Original languageEnglish
    Pages (from-to)4033-4038
    Number of pages6
    JournalJournal of Applied Physics
    Volume82
    Issue number8
    DOIs
    Publication statusPublished - Oct 15 1997

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy(all)

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