Substrate temperature dependence of photovoltaic properties of β-FeSi2/Si heterojunctions prepared by facing-target DC sputtering

Mahmoud Shaban, Kazuhiro Narashima, Tsuyoshi Yoshitake

    Research output: Contribution to journalArticle

    18 Citations (Scopus)

    Abstract

    We fabricated n-type β-FeSi2/p-type Si heterojunctions to be used as thin-film solar cells by the facing-target DC sputtering method. The β-FeSi2 films were deposited on Si(111) substrates at different substrate temperatures ranging from 525 to 660°C. The effect of the substrate temperature on the photovoltaic properties was studied on the basis of the current-voltage characterization and the crystalline structural evaluation of the β-FeSi2/Si heterojunctions. It was found that 600°C is the optimum substrate temperature suitable for the photovoltaic application.

    Original languageEnglish
    Pages (from-to)7708-7710
    Number of pages3
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume46
    Issue number12
    DOIs
    Publication statusPublished - Dec 6 2007

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

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