Substrate temperature dependence of photovoltaic properties of β-FeSi2/Si heterojunctions prepared by facing-target DC sputtering

Mahmoud Shaban, Kazuhiro Narashima, Tsuyoshi Yoshitake

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    15 Citations (Scopus)

    Abstract

    We fabricated n-type β-FeSi2/p-type Si heterojunctions to be used as thin-film solar cells by the facing-target DC sputtering method. The β-FeSi2 films were deposited on Si(111) substrates at different substrate temperatures ranging from 525 to 660°C. The effect of the substrate temperature on the photovoltaic properties was studied on the basis of the current-voltage characterization and the crystalline structural evaluation of the β-FeSi2/Si heterojunctions. It was found that 600°C is the optimum substrate temperature suitable for the photovoltaic application.

    Original languageEnglish
    Pages (from-to)7708-7710
    Number of pages3
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume46
    Issue number12
    DOIs
    Publication statusPublished - Dec 6 2007

    Fingerprint

    Facings
    Sputtering
    Heterojunctions
    heterojunctions
    sputtering
    direct current
    temperature dependence
    Substrates
    Temperature
    temperature
    solar cells
    Crystalline materials
    evaluation
    Electric potential
    electric potential
    thin films

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

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    abstract = "We fabricated n-type β-FeSi2/p-type Si heterojunctions to be used as thin-film solar cells by the facing-target DC sputtering method. The β-FeSi2 films were deposited on Si(111) substrates at different substrate temperatures ranging from 525 to 660°C. The effect of the substrate temperature on the photovoltaic properties was studied on the basis of the current-voltage characterization and the crystalline structural evaluation of the β-FeSi2/Si heterojunctions. It was found that 600°C is the optimum substrate temperature suitable for the photovoltaic application.",
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    T1 - Substrate temperature dependence of photovoltaic properties of β-FeSi2/Si heterojunctions prepared by facing-target DC sputtering

    AU - Shaban, Mahmoud

    AU - Narashima, Kazuhiro

    AU - Yoshitake, Tsuyoshi

    PY - 2007/12/6

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    N2 - We fabricated n-type β-FeSi2/p-type Si heterojunctions to be used as thin-film solar cells by the facing-target DC sputtering method. The β-FeSi2 films were deposited on Si(111) substrates at different substrate temperatures ranging from 525 to 660°C. The effect of the substrate temperature on the photovoltaic properties was studied on the basis of the current-voltage characterization and the crystalline structural evaluation of the β-FeSi2/Si heterojunctions. It was found that 600°C is the optimum substrate temperature suitable for the photovoltaic application.

    AB - We fabricated n-type β-FeSi2/p-type Si heterojunctions to be used as thin-film solar cells by the facing-target DC sputtering method. The β-FeSi2 films were deposited on Si(111) substrates at different substrate temperatures ranging from 525 to 660°C. The effect of the substrate temperature on the photovoltaic properties was studied on the basis of the current-voltage characterization and the crystalline structural evaluation of the β-FeSi2/Si heterojunctions. It was found that 600°C is the optimum substrate temperature suitable for the photovoltaic application.

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