Successive Bloch line write operation in a 1-μM bubble material

Kimihide Matsuyama, T. Ohyama, H. Asada, K. Taniguchi

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Abstract

The successive vertical Bloch line (VBL) write operation has been performed in an as-grown 1-μm bubble material with a flank wall writing scheme. An unwinding VBL pair was nucleated by a domain expanding pulse current (200-mA amplitude, 200-ns pulse width, 8-ns rising edge) applied through a hair-pin type conductor (gap:2.6 μm, width:4 μm). The VBL position was controlled by a local in-plane magnetic field produced by a conductor current of 30 mA and a uniform in-plane magnetic field of 10 Oe. The above operating parameters were adjusted by measuring the collapse field of the stripe domain as a function of the parameters. The increase of bubble collapse field from 442 to 513 Oe in accordance with the number of write operations indicated a successful write operation.

Original languageEnglish
Pages (from-to)6086-6088
Number of pages3
JournalJournal of Applied Physics
Volume75
Issue number10
DOIs
Publication statusPublished - Dec 1 1994

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Matsuyama, K., Ohyama, T., Asada, H., & Taniguchi, K. (1994). Successive Bloch line write operation in a 1-μM bubble material. Journal of Applied Physics, 75(10), 6086-6088. https://doi.org/10.1063/1.355467