In this paper, we report on super Ion1 temperature doping of phosphorus to pofy-Si thin films using XeF excimer laser irradiation in a phosphoric acid solution. In this method, the implantation of P atoms and dopant activation can be performed simultaneously. We prepared pofy-Si films with a thickness of SO nm, and these films were crystallized using XeF excimer laser annealing. After laser doping, the concentration of P atoms in the pofy-Si films was approximately 3.5 × 1018 cm-3, and the resistance of the pofy-Si films decreased by approximately 0.003 times as compared with that before laser doping.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - Jan 1 2016|
|Event||54th Annual SID Symposium, Seminar, and Exhibition 2016, Display Week 2016 - San Francisco, United States|
Duration: May 22 2016 → May 27 2016
All Science Journal Classification (ASJC) codes