Super low temperature doping of phosphorus to Poly-Si thin films using XeF excimer laser irradiation in phosphoric acid solution

Akira Suwa, Hiroshi Ikenoue, Hiroaki Oizumi, Daisuke Nakamura, Tatsuo Okada

Research output: Contribution to journalConference article

Abstract

In this paper, we report on super Ion1 temperature doping of phosphorus to pofy-Si thin films using XeF excimer laser irradiation in a phosphoric acid solution. In this method, the implantation of P atoms and dopant activation can be performed simultaneously. We prepared pofy-Si films with a thickness of SO nm, and these films were crystallized using XeF excimer laser annealing. After laser doping, the concentration of P atoms in the pofy-Si films was approximately 3.5 × 10 18 cm -3 , and the resistance of the pofy-Si films decreased by approximately 0.003 times as compared with that before laser doping.

Original languageEnglish
Pages (from-to)1206-1209
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume47
Issue number1
Publication statusPublished - Jan 1 2016
Event54th Annual SID Symposium, Seminar, and Exhibition 2016, Display Week 2016 - San Francisco, United States
Duration: May 22 2016May 27 2016

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Phosphoric acid
Excimer lasers
Laser beam effects
Polysilicon
Phosphorus
Doping (additives)
Thin films
Atoms
Temperature
Lasers
Ion implantation
Chemical activation
Annealing

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Super low temperature doping of phosphorus to Poly-Si thin films using XeF excimer laser irradiation in phosphoric acid solution. / Suwa, Akira; Ikenoue, Hiroshi; Oizumi, Hiroaki; Nakamura, Daisuke; Okada, Tatsuo.

In: Digest of Technical Papers - SID International Symposium, Vol. 47, No. 1, 01.01.2016, p. 1206-1209.

Research output: Contribution to journalConference article

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