Super low temperature doping of phosphorus to Poly-Si thin films using XeF excimer laser irradiation in phosphoric acid solution

Akira Suwa, Hiroshi Ikenoue, Hiroaki Oizumi, Daisuke Nakamura, Tatsuo Okada

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

In this paper, we report on super Ion1 temperature doping of phosphorus to pofy-Si thin films using XeF excimer laser irradiation in a phosphoric acid solution. In this method, the implantation of P atoms and dopant activation can be performed simultaneously. We prepared pofy-Si films with a thickness of SO nm, and these films were crystallized using XeF excimer laser annealing. After laser doping, the concentration of P atoms in the pofy-Si films was approximately 3.5 × 1018 cm-3, and the resistance of the pofy-Si films decreased by approximately 0.003 times as compared with that before laser doping.

Original languageEnglish
Pages (from-to)1206-1209
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume47
Issue number1
Publication statusPublished - Jan 1 2016
Event54th Annual SID Symposium, Seminar, and Exhibition 2016, Display Week 2016 - San Francisco, United States
Duration: May 22 2016May 27 2016

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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