Superconducting properties of ErBCO films with BaMO3 nanorods (M = Zr and Sn) by pulsed laser deposition

Ryo Teranishi, S. Yasunaga, H. Kai, K. Yamada, Masashi Mukaida, N. Mori, T. Fujiyoshi, A. Ichinose, S. Horii, K. Matsumoto, Y. Yoshida, R. Kita, S. Awaji

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15 Citations (Scopus)

Abstract

Ba complex oxides such as BaMO3 (BMO, M = Zr and Sn) were incorporated into ErBa2Cu3O7-δ (ErBCO) films on SrTiO3 (STO) substrates for realizing higher critical current densities (Jc) in magnetic fields. Nanorods of BMO were formed in the ErBCO films with the rod diameter of about 10-20 nm. Crystal grain alignment of both ErBCO films with BZO and BSO were found to be worse with increasing the doping concentration of BMO into the films, resulting in critical temperature (Tc) degradation for the ErBCO films. Jc of the ErBCO films were enhanced by the corporation of these BMO nanorods in the magnetic fields (B) applied particularly parallel to the c-axis (B//c). Additionally, it was observed that the Jc values of the ErBCO films with BSO were higher than those of ErBCO films with BZO in the all measured magnetic fields (B//c), which indicated that the BSO nanorods acted as more effective pinning centers in ErBCO films. Extremely high Jc of 0.41 MA/cm2 was performed for the ErBCO film with BSO of 4.9 mol% in the magnetic field (B//c) of 3 T. We concluded that not only the decision of pinning materials, but also optimization of the three factors of crystallinity of the superconducting film, Tc of the superconducting film, and doping concentration of the pinning materials into the superconducting film were important to realize higher Jc in a magnetic field.

Original languageEnglish
Pages (from-to)1522-1526
Number of pages5
JournalPhysica C: Superconductivity and its applications
Volume468
Issue number15-20
DOIs
Publication statusPublished - Sep 15 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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