Superlattice stacking structure in InGaN thin film pseudomorphic to GaN (0001) substrate: Semigrand canonical Monte Carlo simulation

Atsushi Mori, Tomonori Ito, Yoshihiro Kangawa, Akinori Koukitu

Research output: Contribution to journalConference article

Abstract

Superlattice stacking structures in the Ga-rich branch of wurtzite In xGa1-xN/GaN were found using semigrand canonical Monte Carlo simulations, which were performed aiming at the construction of the alloy phase diagram [Mori et al., Mater. Phys. Mech. 6, 49 (2003)]. Simulated systems were InxGa1-xN thin films pseudomorphic to the GaN (0001) substrate. Continuing the simulations, we revealed that In-rich layers parallel to the substrate were formed in Ga-rich regions. At 800 K, traversing along the c direction GGGIGGGI⋯ superlattice-type stackings were more frequently observed, where G and I indicate the Ga-rich and In-rich layers, respectively. As the temperature increased along the two-phase boundary the superlattice structure changes so that many In-rich layers were included. The In content of the Ga-rich phase eventually exceeded 0.5 at a higher temperature such as 875 K.

Original languageEnglish
Pages (from-to)2486-2489
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
DOIs
Publication statusPublished - Dec 1 2003
Externally publishedYes
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: May 25 2003May 30 2003

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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